Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Amine Lakcher"'
Autor:
Amine Lakcher, Gunwoong Lee, Geert Vinken, Ahmed Zayed, Ruxandra Mustata, Jay Jung, Beomki Shin, Arno van den Brink, Mohamed El Kodadi, Paul Böcker, Soo Kyung Lee, Jeongsu Park, Gratiela Isai, Taeddy Kim, Jan-Pieter van Delft, Sangjun Han, Yong-Sik Shin, Chanha Park, Jennifer Shumway
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXIV.
The market transition from 2D to 3D-NAND in recent years requires strict focus control and monitoring solutions. ASML’s μDBF targets (micro Diffraction Based Focus) enable on-product focus measurement which can be used to optimize scanner correcti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fcb522f2f82a1be31985ac620d89729
https://doi.org/10.1117/12.2552930
https://doi.org/10.1117/12.2552930
Autor:
Clémence Jamin-Mornet, Alain Ostrovsky, Etienne Mortini, Ludovic Berthier, J. Ducote, Laurent Bidault, B. Le-Gratiet, Maxime Besacier, Amine Lakcher
Publikováno v:
Optical Microlithography XXXI.
From the first digital cameras which appeared during the 70s to cameras of current smartphones, image sensors have undergone significant technological development in the last decades. The development of CMOS image sensor technologies in the 90s has b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18f3ad9e65dcf2781439c755b0c1454d
https://doi.org/10.1117/12.2297396
https://doi.org/10.1117/12.2297396
Autor:
L. Depre, J.-G. Simiz, N. Sen, B. Le-Gratiet, P. Fanton, T. Hasan, Amine Lakcher, H. Tien, C. Prentice, Stefan Hunsche, R. La Greca
Publikováno v:
2017 28th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
At 28nm technology and below, hot spot prediction and process window control on production wafers have become increasingly critical to prevent sensitive pattern geometries from becoming yield limiting defects as a result of process variation. We prev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db0f07f759096b4f9f1e83415cef3ac4
https://doi.org/10.1109/asmc.2017.7969269
https://doi.org/10.1109/asmc.2017.7969269
Autor:
T. Hasan, B. Le-Gratiet, L. Depre, J.-G. Simiz, R. La Greca, Amine Lakcher, Stefan Hunsche, C. Prentice, P. Fanton
Publikováno v:
SPIE Proceedings.
At 28nm technology node and below, hot spot prediction and process window control across production wafers have become increasingly critical to prevent hotspots from becoming yield-limiting defects. We previously established proof of concept for a sy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41e34107949267919c33e4142bbdb7c9
https://doi.org/10.1117/12.2260024
https://doi.org/10.1117/12.2260024
Publikováno v:
Proceedings of SPIE, the International Society for Optical Engineering
Proceedings of SPIE, the International Society for Optical Engineering, SPIE, The International Society for Optical Engineering, 2017, pp.10446, art. no. 104460L. ⟨10.1117/12.2280096⟩
Proceedings of SPIE, the International Society for Optical Engineering, 2017, pp.10446, art. no. 104460L. ⟨10.1117/12.2280096⟩
Proceedings of SPIE, the International Society for Optical Engineering, SPIE, The International Society for Optical Engineering, 2017, pp.10446, art. no. 104460L. ⟨10.1117/12.2280096⟩
Proceedings of SPIE, the International Society for Optical Engineering, 2017, pp.10446, art. no. 104460L. ⟨10.1117/12.2280096⟩
Today’s technology nodes contain more and more complex designs bringing increasing challenges to chip manufacturing process steps. It is necessary to have an efficient metrology to assess process variability of these complex patterns and thus extra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::05884769678390041beded55b076fac8
https://hal.univ-grenoble-alpes.fr/hal-02344512
https://hal.univ-grenoble-alpes.fr/hal-02344512
Publikováno v:
32nd European Mask and Lithography Conference.
In the early phases of technology development, designers and process engineers have to converge toward efficient design rules. Their calculations are based on process assumptions and result in a design rule based on known process variability capabili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa3933659089e4c72b95f7e8746756fc
https://doi.org/10.1117/12.2249565
https://doi.org/10.1117/12.2249565
Publikováno v:
Proceedings of SPIE; 7/30/2019, Vol. 11148, p111480A-1-111480A-10, 10p
Autor:
Le Gratiet, B., Bouyssou, Regis, Ducoté, J., Dezauzier, Christophe, Ostrovsky, Alain, Beylier, Charlotte, Gardin, Christian, Petroni, Paolo, Milléquant, Matthieu, Chagoya-Garzon, Alexandre, Schiavone, Patrick
Publikováno v:
Proceedings of SPIE; 1/22/2019, Vol. 10959, p1-9, 9p
Autor:
Le-Gratiet, B., Mermet, O., Gardin, C., Desmoulins, S., Kiers, T., Wang, Y., Tang, P., Tien, D., Wang, F., Prentice, C., Tel, W., Hunsche, S.
Publikováno v:
Proceedings of SPIE; 1/22/2019, Vol. 10959, p1-11, 11p
Autor:
Ducoté, Julien, Lakcher, Amine, Bidault, Laurent, Philipot, Antoine-Regis, Ostrovsky, Alain, Mortini, Etienne, Le-Gratiet, Bertrand
Publikováno v:
Proceedings of SPIE; 7/22/2018, Vol. 10775, p1-4, 4p