Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Amin Rassekh"'
Publikováno v:
IEEE Access, Vol 10, Pp 75245-75256 (2022)
Electrostatically confined quantum dots in semiconductors hold the promise to achieve high scalability and reliability levels for practical implementation of solid-state qubits where the electrochemical potentials of each quantum dot can be independe
Externí odkaz:
https://doaj.org/article/d0ebad5ba3664520809ebcce8b87f0d1
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 939-947 (2020)
In this article, an analytical predictive model of the negative capacitance (NC) effect in symmetric long channel double-gate junctionless transistor is proposed based on a charge-based model. In particular, we have investigated the effect of the thi
Externí odkaz:
https://doaj.org/article/0f186ab3bca24a45b95525843b03c5a4
Autor:
Ali Saeidi, Benjamin Lambert, Adrian M. Ionescu, Farzan Jazaeri, Matteo Cavalieri, Amin Rassekh, Nicolo Oliva, Sadegh Kamaei
Publikováno v:
IEEE Electron Device Letters
This experimental study investigates a novel multi-functional one dimensional-two dimensional (1D-2D) heterojunction made of two different band-gap semiconductors, i.e. single-walled carbon nanotube (SWCNT) and tungsten di-selenide (WSe2). The propos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d7555e4ac011b2287f0d344946053783
https://doi.org/10.1109/led.2020.2974400
https://doi.org/10.1109/led.2020.2974400
Autor:
Morteza Fathipour, Amin Rassekh
Publikováno v:
Journal of Computational Electronics. 19:631-639
We present a detailed study on the n-channel single-gate junctionless transistor (JLT) at the $${10}-\hbox{nm}$$ node. We investigate the influence of its structural parameters on the on-state current and the off-state leakage current. Furthermore, w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f730b7b7701498161dea1d7b81ad771c
https://doi.org/10.1007/s10825-020-01475-9
https://doi.org/10.1007/s10825-020-01475-9
Publikováno v:
IEEE Transactions on Electron Devices. 66:3466-3472
In this paper, we argue that communication at the speed of light (CaSoL) through on-chip copper interconnects is possible in the near future based on giga-scale integration (GSI) technologies. A three-step algorithm is introduced to design the optimu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18f988b5058f15ed1a90940800495266
https://doi.org/10.1109/ted.2019.2919629
https://doi.org/10.1109/ted.2019.2919629
Publikováno v:
IEEE Journal of the Electron Devices Society
IEEE Journal of the Electron Devices Society, Vol 8, Pp 939-947 (2020)
IEEE Journal of the Electron Devices Society, Vol 8, Pp 939-947 (2020)
In this article, an analytical predictive model of the negative capacitance (NC) effect in symmetric long channel double-gate junctionless transistor is proposed based on a charge-based model. In particular, we have investigated the effect of the thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9323ca0677911de004bbf891e2ea958c
In this article, an analytical predictive model of interface charge traps in symmetric, long-channel double-gate, junctionless transistors (JLTs) is proposed based on a charge-based model. Interface charge traps arising from exposure to chemicals, hi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ceea3e82b80804b4b281e99db6144675
Relying on the previously developed charge-based approaches, this paper presents a physics-based design space of negative capacitance in double-gate and bulk MOSFET architectures. The impact of thickness variation of the ferroelectric on the DC chara
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::28ba16139c4762115be4905d58902163
https://infoscience.epfl.ch/record/294652
https://infoscience.epfl.ch/record/294652
This article analyzes the design space stability of negative capacitance double-gate junctionless field-effect transistors (NCDG JLFETs). Using analytical expressions derived from a charge-based model, we predict instability condition, hysteresis vol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::99a5379ac79a39986e5f16491533f187
https://infoscience.epfl.ch/record/290931
https://infoscience.epfl.ch/record/290931
Electrostatically confined quantum dots in semiconductors hold the promise to achieve high scalability and reliability levels for practical implementation of solid-state qubits where the electrochemical potentials of each quantum dot can be independe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::57c9b0e1caf583a6b803d46811e936eb
https://infoscience.epfl.ch/record/295492
https://infoscience.epfl.ch/record/295492