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pro vyhledávání: '"Amin Ranjbar Aghjehkohal"'
Autor:
Nasrollah Najibi Ilkhechi, Mahdi Mozammel, Ebrahim Feyzi Tanour Aghaj, Amin Ranjbar Aghjehkohal
Publikováno v:
Journal of Materials Science: Materials in Electronics. 28:12467-12474
In this study, different samples of Si and Sr co-doped TiO2 thin films (5 mol% Si and 5-10-15-20 mol% Sr) were prepared via simple sol–gel synthesis method by using strontium acetate as strontium precursor, tetraethoxysilane as silicon precursor, a
Autor:
Mahdi Mozammel, Amin Ranjbar Aghjehkohal, Nasrollah Najibi Ilkhechi, Ebrahim Feyzi Tanouraghaj
Publikováno v:
Journal of Materials Science: Materials in Electronics. 28:4598-4605
In this study, preparation of Si and Cd co doped (5 mol% Si and 5–20 mol% Cd) TiO2 dip-coated thin films on glass substrates via sol–gel process have been investigated. The samples were characterized by X-ray diffraction (XRD) and Scanning electr