Zobrazeno 1 - 10
of 48
pro vyhledávání: '"Amimer, K."'
Publikováno v:
In Materials Science & Engineering B 2001 82(1):16-18
Autor:
Amimer, K., Georgakilas, A. *, Androulidaki, M., Tsagaraki, K., Pavelescu, M., Mikroulis, S., Constantinidis, G., Arbiol, J., Peiro, F., Cornet, A., Calamiotou, M., Kuzmik, J., Davydov, V.Y.
Publikováno v:
In Materials Science & Engineering B 2001 80(1):304-308
Autor:
Georgakilas, A *, Amimer, K, Tzanetakis, P, Hatzopoulos, Z, Cengher, M, Pecz, B, Czigany, Zs, Toth, L, Baidakova, M.V, Sakharov, A.V, Davydov, V.Yu
Publikováno v:
In Journal of Crystal Growth 2001 227:410-414
Publikováno v:
In Journal of Crystal Growth 2000 217(4):371-377
Autor:
Androulidaki, M., Georgakilas, A., Peiro, F., Amimer, K., Zervos, Matthew, Tsagaraki, K., Dimakis, M., Cornet, A.
Publikováno v:
Physica Status Solidi (A) Applied Research
The in-situ low temperature preparation of hydrogen passivated Si(111) surfaces has been investigated for GaN growth by rf-plasma source molecular beam epitaxy. The GaN/Si heterostructures were analyzed by transmission electron microscopy, infrared t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4485::9cdc761b3b666dcb86d8af3bd5a6d0a5
http://gnosis.library.ucy.ac.cy/handle/7/48212
http://gnosis.library.ucy.ac.cy/handle/7/48212
The material properties of GaN thin films grown by radio frequency (RF) nitrogen plasma source molecular beam epitaxy (MBE) on (0001) Al2O3 substrates have been correlated to the V/III flux ratio during GaN growth and to the type and thickness of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2127::dd322bc64280930aab3a8512222810a2
https://pergamos.lib.uoa.gr/uoa/dl/object/uoadl:3013110
https://pergamos.lib.uoa.gr/uoa/dl/object/uoadl:3013110
Autor:
Amimer, K Georgakilas, A Tsagaraki, K Androulidaki, M and Cengher, D Toth, L Pecz, B Calamiotou, M
Single-crystal hexagonal and cubic GaN thin films have been grown by radio-frequency nitrogen plasma source molecular beam epitaxy directly on vicinal (001) GaAs substrates, misoriented by 2 degrees toward [100], without using an incident As beam dur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2127::1b92fa010deaf576d7873a71a9537a16
https://pergamos.lib.uoa.gr/uoa/dl/object/uoadl:3053322
https://pergamos.lib.uoa.gr/uoa/dl/object/uoadl:3053322
Influence of MBE growth temperature on the properties of cubic GaN grown directly on GaAs substrates
Cubic GaN layers have been grown by rf-plasma source Molecular Beam Epitaxy (MBE) directly on vicinal (100) GaAs substrates, misoriented by 2° toward [001], without using an incident As beam during oxide desorption or the following stages of growth.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2127::73d898c172fb6f34dc30c92bce522aa0
https://pergamos.lib.uoa.gr/uoa/dl/object/uoadl:3013257
https://pergamos.lib.uoa.gr/uoa/dl/object/uoadl:3013257
Autor:
Androulidaki, M., Amimer, K., Tsagaraki, K., Zervos, M., Constantinidis, G., Hatzopoulos, Z., Georgakilas, A., Peiro, F., Cornet, A.
Publikováno v:
Microelectronics, Microsystems & Nanotechnology: Papers Presented of At Mmn 2000; 2001, p197-200, 4p