Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Amikam Nemirovsky"'
Publikováno v:
Sensors, Vol 23, Iss 17, p 7344 (2023)
A stochastic model for characterizing the conversion gain of Active Pixel Complementary metal–oxide–semiconductor (CMOS) image sensors (APS), assuming stationary conditions was recently presented in this journal. In this study, we extend the stoc
Externí odkaz:
https://doaj.org/article/9570f3b7943a47bdb3e8aa5a8c5f64b3
Publikováno v:
Sensors, Vol 22, Iss 19, p 7620 (2022)
A stochastic model for characterizing the conversion gain of Active Pixel Complementary metal–oxide–semiconductor (CMOS) image sensors (APS) with at least four transistors is presented. This model, based on the fundamental principles of electroni
Externí odkaz:
https://doaj.org/article/28e29bb30ee2474f955bea78ba5231aa
Publikováno v:
Advanced Photon Counting Techniques XIII.
The growing demand for 3D time of flight (ToF) imaging LiDAR (Light Detection and Ranging) systems, based on CMOS Silicon Photomultiplier (SiPM), poses an engineering and scientific challenge. SiPM, which is composed of a mosaic array of passive quen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2cacf5b470de97761def7e770138891b
https://doi.org/10.1117/12.2520490
https://doi.org/10.1117/12.2520490
Autor:
Alexander Svetlitza, Amikam Nemirovsky, Igor Brouk, Alex Zviagintsev, Sharon Bar-Lev, Yael Nemirovsky, Ilan Bloom, Tanya Blank, Sara Stolyarova
Publikováno v:
2017 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS).
This paper presents the performance of CMOS-SOI TMOS thermal sensor processed in a well-established 1μm technology, operating in air. The TMOS is a micro-machined CMOS transistor, operating at subthreshold. The thermally isolated floating MOS transi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad2c7db0dfc919166058cc512719dad2
https://doi.org/10.1109/comcas.2017.8244810
https://doi.org/10.1109/comcas.2017.8244810
Publikováno v:
Solid-State Electronics. 54:28-36
A detailed time-domain analysis of noise due to thermal, 1/f and shot noise sources in CMOS active pixel sensors (APS) based on 3T and 4T pixel design is performed. We suggest that the conventional noise analysis based on the frequency domain, usuall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32697f8ab5de88a35906f9679d47b794
https://doi.org/10.1016/j.sse.2009.09.003
https://doi.org/10.1016/j.sse.2009.09.003