Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Amer Brighet"'
Autor:
Mohamed Kechouane, Amer Brighet, Isodiana Crupi, Mohamed Trari, Bartolomeo Megna, Roberto Macaluso, Abderrahmane Boughelout
Publikováno v:
Semiconductor Science and Technology. 36:015001
The structural and photoelectrical properties of Al-doped ZnO (AZO)/SiC/p-Si and AZO/SiC/n-Si heterojunctions, fabricated at low temperature by pulsed laser deposition, were investigated by means of a number of techniques. Raman analysis indicates th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1f4fb1a4c624066c505facd3c8cf0ef6
https://doi.org/10.1088/1361-6641/abbc42
https://doi.org/10.1088/1361-6641/abbc42
Autor:
N. Zebbar, Mohamed Kechouane, M. Berouaken, T. Hadjersi, L. Chabane, H.Y. Seba, A. Manseri, Amer Brighet
Publikováno v:
Thin Solid Films. 699:137891
In this paper, we study structures contained thin hydrogenated amorphous silicon (a-Si:H) films deposited on porous silicon multilayers (Distributed Bragg Reflector DBR) formed by electrochemical etching of crystalline silicon (c-Si) wafers. The a-Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c5a24e703d5a0bfe9143d8ad93b7550
https://doi.org/10.1016/j.tsf.2020.137891
https://doi.org/10.1016/j.tsf.2020.137891
Publikováno v:
NanoWorld Journal.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b1b702729f63b51ece37b2a42200c6e
https://doi.org/10.17756/nwj.2017-047
https://doi.org/10.17756/nwj.2017-047
Autor:
Aissa Keffous, Yacine Boukennous, Y. Belkacem, T. Hadjersi, Amer Brighet, A. Boukezzata, Noureddine Gabouze, Hamid Menari, A. Cheriet, Mohamed Kechouane, M.A. Ouadfel
Publikováno v:
Applied Surface Science. 265:94-100
Si-rich hydrogenated amorphous silicon carbide (a-Si1−xCx:H) thin films with different carbon fractions were elaborated by a d.c. magnetron sputtering system. Their structural and optical properties were investigated by UV–visible spectrophotomet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f943c714f2daed49f36db7e51755817
https://doi.org/10.1016/j.apsusc.2012.10.129
https://doi.org/10.1016/j.apsusc.2012.10.129
Autor:
Mohamed Kechouane, Lakhdar Guerbous, A. Boukezzata, G. Nezzal, Aissa Keffous, A. Manseri, Noureddine Gabouze, Y. Belkacem, Amer Brighet, Hamid Menari
Publikováno v:
Journal of Luminescence. 131:1184-1188
Electrochemical etching of amorphous SiC in fluoride solution was studied. Anodic dissolution and passivation are observed for p-type electrodes under dark illumination. The dissolution of p-type a-Si1−xCx is found to be under mixed transport/kinet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa75f98e063ecb8ca5ce198241d3f137
https://doi.org/10.1016/j.jlumin.2011.02.029
https://doi.org/10.1016/j.jlumin.2011.02.029
Publikováno v:
ECS Transactions. 33:209-225
The Photoelectrical properties of hydrogenated amorphous silicon thin films (a-Si:H) deposited on porous silicon (PSi) were investigated. Porous Si layers were formed by electrochemical etching of p+-type crystalline Si in a hydrofluoric solution, wh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e6f1542efb08e43342cae12df36e5a6
https://doi.org/10.1149/1.3553172
https://doi.org/10.1149/1.3553172
Autor:
G. Nezzal, Y. Belkacem, Mohamed Kechouane, Lakhdar Guerbous, Noureddine Gabouze, A. Boukezzata, Aissa Keffous, A. Cheriet, S. Kaci, Isa Menous, Amer Brighet, A. Manseri, Hamid Menari
Publikováno v:
Modern Physics Letters B. 24:2101-2112
Hydrogenated amorphous SiC films ( a - Si 1-x C x: H ) were prepared by DC magnetron sputtering technique on p type Si (100) and corning 9075 substrates at low temperature, by using 32 sprigs of silicon carbide (6 H - SiC ). The deposited film a - Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7204da5c3746b65c03b756fda4f1c20e
https://doi.org/10.1142/s0217984910024262
https://doi.org/10.1142/s0217984910024262
Autor:
Rabah Cherfi, A. Boukezzata, Noureddine Gabouze, Amer Brighet, A. Cheriet, Aissa Keffous, Y. Belkacem, Yacine Boukennous, Lakhdar Guerbous, Hamid Menari, Isa Menous, Mohamed Kechouane
Publikováno v:
Applied Surface Science. 256:4591-4595
Hydrogenated amorphous SiC films (a-Si1−xCx:H) were prepared by dc magnetron sputtering technique on p-type Si(1 0 0) and corning 9075 substrates at low temperature, by using 32 sprigs of silicon carbide (6H–SiC). The deposited a-Si1−xCx:H film
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40ea0d628388d6ed46408aab686f067c
https://doi.org/10.1016/j.apsusc.2010.02.054
https://doi.org/10.1016/j.apsusc.2010.02.054
Publikováno v:
physica status solidi c. 7:561-564
The effect of plasma discharge power on the properties of a-SiC:H thin films deposited by DC magnetron sputtering from the use of a liquid source based on hydrocarbon (trimethylphosphine: TMP, (P(CH3)3) are presented. The liquid source based of trime
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::920107bcf4d92c88ab82864b98bbeac7
https://doi.org/10.1002/pssc.200982825
https://doi.org/10.1002/pssc.200982825
Autor:
Amer Brighet, Aissa Keffous, S. Merazga, Lakhder Guerbous, Kamel Mirouh, Mohamed Kechouane, Y. Belkacem
Publikováno v:
International Journal of Nanotechnology. 10:587
Hydrogenated amorphous silicon carbide thin films (a–SiC:H) were elaborated by DC magnetron sputtering technique by using 6H–SiC as target. The a–SiC:H films of 0.9–1.5 µm thicknesses were deposited at different temperatures of 250, 350, 450
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02021131201b7ec965d43887aed2c2d7
https://doi.org/10.1504/ijnt.2013.053527
https://doi.org/10.1504/ijnt.2013.053527