Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Ameer F. Roslan"'
Publikováno v:
Journal of Mechanical Engineering and Sciences, Vol 13, Iss 3, Pp 5455-5479 (2019)
Random parameter variations have been an influential factor that deciding the performance of a metal-oxide-semiconductor field effect transistor (MOSFET), especially in nano-scale regime. Thus, controlling the variation of those parameters becomes ex
Externí odkaz:
https://doaj.org/article/e4dbb47b49ee40b7a7652575d0415b05
Autor:
Ameer F. Roslan, F. Salehuddin, A.S.M. Zain, K.E. Kaharudin, N.R. Mohamad, Afifah Maheran A.H, H. Haroon, H.A. Razak, S.K. Idris, I. Ahmad
Publikováno v:
Journal of Mechanical Engineering. 19:145-162
In this paper, the effect of high permittivity gate spacer on short channel effects (SCEs) for the 16 nm double-gate finFET is investigated, with the output responses optimized using L9 orthogonal array (OA) Taguchi method. The determination is done
The impact of the optimization using Taguchi statistical method towards the electrical properties of a 16 nm double-gate FinFET (DG-FinFET) is investigated and analyzed. The inclusion of drive current (ION), leakage current (IOFF), and threshold volt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8916436dc832e68c865319367b83164d
https://zenodo.org/record/5701990
https://zenodo.org/record/5701990
Autor:
K.E. Kaharudin, Anis Suhaila Mohd Zain, Ameer F. Roslan, Z. A. F. M. Napiah, Fauziyah Salehuddin
The main challenge in MOSFET minituarization is to form an ultra-shallow source/drain (S/D) junction with high doping concentration gradient, which requires an intricate S/D and channel engineering. Junctionless MOSFET configuration is an alternative
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::be10a6449251742d2c0ffc42dc77627c
https://zenodo.org/record/4117779
https://zenodo.org/record/4117779
Publikováno v:
Indonesian Journal of Electrical Engineering and Computer Science. 23:150
This paper offers a systematic analysis on the impact of work function (WF) variations on electrostatic and radio frequency (RF) performances of nchannel junctionless strained double gate (DG) (n-JLSDGM) metal oxide semiconductor field effect transis
Publikováno v:
Journal of Mechanical Engineering and Sciences; Vol 13 No 3 (2019): (September 2019); 5455-5479
Random parameter variations have been an influential factor that deciding the performance of a metal-oxide-semiconductor field effect transistor (MOSFET), especially in nano-scale regime. Thus, controlling the variation of those parameters becomes ex
The junctionless MOSFET architectures appear to be attractive in realizing the Moore’s law prediction. In this paper, a comprehensive 2-D simulation on junctionless vertical double-gate MOSFET (JLDGVM) under geometric and process consideration was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2659::d06ad0a00b90f950a49788bb09aa0995
https://zenodo.org/record/4066267
https://zenodo.org/record/4066267
Autor:
Abdul Razak Hanim, K.E. Kaharudin, Ameer F. Roslan, Z. A. F. M. Napiah, Haroon Hazura, Anis Suhaila Mohd Zain, S. K. Idris, Fauziyah Salehuddin
Publikováno v:
Lecture Notes in Mechanical Engineering ISBN: 9789811395383
The use of high dielectric permittivity in vertical double gate MOSFET (VDG-MOSFET) can overcome the problem of power dissipation and leakage current. In this paper, we investigated the performance potential of Titanium dioxide (TiO2) which has been
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52dd7d8156473a6866a5f13f8b25e202
https://doi.org/10.1007/978-981-13-9539-0_46
https://doi.org/10.1007/978-981-13-9539-0_46
Autor:
Abdul Razak Hanim, Anis Suhaila Mohd Zain, S. K. Idris, K.E. Kaharudin, Ameer F. Roslan, Haroon Hazura, Fauziyah Salehuddin
Publikováno v:
Lecture Notes in Mechanical Engineering ISBN: 9789811395383
This project examines and analyzes the process parameter variance towards on-state drive current (ION) and leakage current (IOFF) towards the 16 nm double-gate FinFET (DG-FinFET) device by the implementation of 2k-factorial design, with comparisons m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d97e7fddbf03bd7f142f47d44bdda0f5
https://doi.org/10.1007/978-981-13-9539-0_41
https://doi.org/10.1007/978-981-13-9539-0_41
Autor:
Ameer F. Roslan, F. Salehuddin, A. S. M. Zain, K. E. Kaharudin, H. Hazura, A. R. Hanim, S. K. Idris, B. Z. Zarina, Afifah Maheran A. H
This paper presents an investigation on properties of Double Gate FinFET (DG-FinFET) and impact of physical properties of FinFET towards short channel effects (SCEs) for 30 nm device, for which the depletion-layer widths of the source-drain relates t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2659::48f4faaa4518b2cce1c02f8d19256898
https://zenodo.org/record/4320380
https://zenodo.org/record/4320380