Zobrazeno 1 - 10 of 29 pro vyhledávání: '"Ambri, M."'
1
Akademický článek
Transmission electron microscopy and cathodoluminescence of tensile-strained GaxIn1-xP/InP heterostructures. I. Spatial variations of the tensile stress relaxation.
Autor: Cléton, F., Sieber, B., Lefebvre, A., Bensaada, A., Masut, R. A., Bonard, J. M., Ganière, J. D., Ambri, M.
Publikováno v: Journal of Applied Physics; 7/15/1996, Vol. 80 Issue 2, p827, 10p, 7 Black and White Photographs, 4 Charts, 3 Graphs
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2
Akademický článek
Electron microscopy studies of pulsed electron beam annealing in phosphorus-implanted silicon.
Autor: Tholomier, M., Pitaval, M., Ambri, M., Barbier, D., Laugier, A.
Publikováno v: Journal of Applied Physics; Mar1983, Vol. 54 Issue 3, p1588-1594, 7p
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4
Akademický článek
Defect creation in LiNbO 3 irradiated by medium masses ions in the electronic stopping power regime.
Autor: Ramos, S. M. M., Canut, B., Ambri, M., Bonardi, N., Pitaval, M., Bernas, H., Chaumont, J.
Publikováno v: Radiation Effects & Defects in Solids; Apr1998, Vol. 143 Issue 4, p299-309, 11p
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5
Periodical
Europium diffusion enhancement in LiNbO3irradiated with GeV nickel ions: influence of the damage morphology
Autor: Ramos, S.M.M., Canut, B., Ambri, M., Clement, C., Dooryhee, E., Pitaval, M., Thevenard, P., Toulemonde, M.
Publikováno v: Nuclear Instruments and Methods in Physics Research Section B; February 1996, Vol. 107 Issue: 1-4 p254-258, 5p
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6
Periodical
Defect creation in LiNbO3irradiated by medium masses ions in the electronic stopping power regime
Autor: Ramos, S.M. M., Canut, B., Ambri, M., Bonardi, N., Pitaval, M., Bernas, H., Chaumont, J.
Publikováno v: Radiation Effects and Defects in Solids; April 1998, Vol. 143 Issue: 4 p299-309, 11p
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7
Periodical
Formation of polycrystalline BaTi~xO~y compounds in barium implanted TiO~2
Autor: Ramos, S. M. M., Canut, B., Ambri, M., Bonardi, N., Brenier, R., Pitaval, M., Thevenard, P., Brunel, M.
Publikováno v: Applied Surface Science; 1996, Vol. 93 Issue: 2 p191-196, 6p
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8
Transmission electron microscopy and cathodoluminescence of tensile-strained Ga/sub x/In/sub 1-x/P/InP heterostructures. I. Spatial variations of the tensile stress relaxation
Autor: Cléton, F, Sieber, B, Lefebvre, A, Bensaada, A, Masut, RA, Bonard, JM, Ganiere, J. D., Ambri, M
We have investigated the optical and structural properties of tensile-strained GaxIn1-xP/InP heterojunctions by cathodoluminescence (CL) in the scanning electron microscope and by transmission electron microscopy (TEM). The lattice mismatch of the sa
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_______185::1345bca56f2cf21718f4ccd37df1e692
https://infoscience.epfl.ch/record/100573
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10
Cathodoluminescence and TEM investigations of stress relaxation mechanisms in GaxIn1-xP/InP heterostructures
Autor: Cleton, F., Sieber, B., Lefebvre, A., Bensaada, A., Masut, R. A., Bonard, J. M., Ganiere, J. D., Ambri, M.
Two tensile-strained GaxIn1-xP / InP (001) heterostructures (with x = 6.5% and x = 11.2%) have been studied by TEM and cathodoluminescence. In both structures stacking faults and twins, located in the epilayer, have been found preferably along the [(
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_______185::e77f9c29dc8367ff7f5ec558a1ee67d3
https://infoscience.epfl.ch/record/110927
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