Zobrazeno 1 - 10
of 125
pro vyhledávání: '"Ambika Prasad Shah"'
Publikováno v:
Memories - Materials, Devices, Circuits and Systems, Vol 5, Iss , Pp 100072- (2023)
Externí odkaz:
https://doaj.org/article/155878c277974c0e84b4ef83394757d1
Publikováno v:
Memories - Materials, Devices, Circuits and Systems, Vol 5, Iss , Pp 100071- (2023)
This paper presents an inventive and extremely dependable radiation-hardened by-design (RHBD) 12T SRAM Cell with enhanced writing capability (RHWC-12T) for a space radiation environment. The Proposed RHWC-12T SRAM is designed on Cadence Virtuoso with
Externí odkaz:
https://doaj.org/article/83ba10edce364611aabc3fe9192a00e3
Autor:
Syed Farah Naz, Ambika Prasad Shah
Publikováno v:
IEEE Open Journal of Circuits and Systems, Vol 4, Pp 241-257 (2023)
The reversible gate has been one of the emerging research areas that ensure a continual process of innovation trends that explore and utilizes the resources. This review paper provides a comprehensive overview of reversible gates, including their fun
Externí odkaz:
https://doaj.org/article/533650bb6e274bb48bdaccccfb81490c
Publikováno v:
Memories - Materials, Devices, Circuits and Systems, Vol 4, Iss , Pp 100055- (2023)
Physically Unclonable Function (PUF) is an emerging modern approach to the security concerns of the physical systems which require the protection of sensitive data. PUF generates unique, reliable, and secure responses which can be utilized for crypto
Externí odkaz:
https://doaj.org/article/f82beb6f7a394b19a63d1375d05f0622
Publikováno v:
Proceedings of the Great Lakes Symposium on VLSI 2023.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10c09284f1937784c9ee64fccb9fca51
https://doi.org/10.1145/3583781.3590321
https://doi.org/10.1145/3583781.3590321
Publikováno v:
Analog Integrated Circuits and Signal Processing. 109:657-671
CMOS circuits based on scaled transistors are typically more susceptible to soft errors caused by energetic particles in the radiation environment than circuits employing their large-area counterparts. In this paper, a soft error tolerant latch built
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::663a8f443cbef1c74c742a3e18ffb0c0
https://doi.org/10.1007/s10470-021-01924-w
https://doi.org/10.1007/s10470-021-01924-w
Autor:
Santosh Kumar Vishvakarma, Ambika Prasad Shah, Neha Gupta, Tanisha Gupta, Sajid Khan, Rana Sagar Kumar
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 20:694-705
Negative bias temperature instability (NBTI) is the major reliability issue which affects many parameters such as threshold voltage, mobility, and leakage current. The threshold voltage of the PMOS transistor increases due to NBTI with stress time, w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b38ea38cba8d6f01c96aafd692e65d2c
https://doi.org/10.1109/tdmr.2020.3019135
https://doi.org/10.1109/tdmr.2020.3019135
Autor:
Ambika Prasad Shah, Vishal Sharma, Santosh Kumar Vishvakarma, Neha Gupta, Shailesh Singh Chouhan
Publikováno v:
Analog Integrated Circuits and Signal Processing. 107:339-352
The work proposes an 11T SRAM cell which confirms its reliability for Internet of Things (IoT) based health monitoring system. The cell executes improved write and read ability using data-dependent feedback cutting and read decoupled access path mech
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0d57cb005fa4241f2a0f46fcde8f23a
https://doi.org/10.1007/s10470-020-01728-4
https://doi.org/10.1007/s10470-020-01728-4
Utilizing manufacturing variations to design a tri-state flip-flop PUF for IoT security applications
Autor:
Sajid Khan, Shailesh Singh Chouhan, Sudha Rani, Ambika Prasad Shah, Jai Gopal Pandey, Neha Gupta, Santosh Kumar Vishvakarma
Publikováno v:
Analog Integrated Circuits and Signal Processing. 103:477-492
Physically unclonable functions (PUF) are digital fingerprints which generate high entropy, temper-resilient keys and/or chip-identifiers for security applications. When considering the miniaturized hardware development for the Internet of Things (Io
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9690c7c4e9f8e6c51eb5c1bb2251b924
https://doi.org/10.1007/s10470-020-01642-9
https://doi.org/10.1007/s10470-020-01642-9
Publikováno v:
Journal of Electronic Testing. 36:255-269
Soft error in SRAM cell is one of the major reliability concern under aerospace radiation environment. A soft error occurs in SRAM cell due to charged particle strikes on sensitive nodes. In this paper a radiation hardened asymmetric 10T (AS10T) SRAM
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a11abf3a17426b91ce7b686f28531efe
https://doi.org/10.1007/s10836-020-05864-7
https://doi.org/10.1007/s10836-020-05864-7