Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Amber Kumar Jain"'
Autor:
Pharyanshu Kachhawa, Shivanshu Mishra, Amber Kumar Jain, Chaturvedula Tripura, Joshy Joseph, Vegesena Radha, Nidhi Chaturvedi
Publikováno v:
IEEE Sensors Journal. 22:6256-6262
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::472d817e1eec779433e9b4d2f2376bf5
https://doi.org/10.1109/jsen.2022.3150027
https://doi.org/10.1109/jsen.2022.3150027
Autor:
Shivanshu Mishra, Pharyanshu Kachhawa, Amber Kumar Jain, Rajiv Ranjan Thakur, Nidhi Chaturvedi
Publikováno v:
Lab on a Chip. 22:4129-4140
This work reports rapid, label-free and specific detection of the HER2 antigen using a gallium nitride (GaN) high electron mobility transistor (HEMT). Thiol-based chemistry has been utilized to immobilize the corresponding HER2 antibody in the sensin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::00e5003241f2c0a01debcc1cb53f4008
https://doi.org/10.1039/d2lc00349j
https://doi.org/10.1039/d2lc00349j
Publikováno v:
Lecture Notes in Electrical Engineering ISBN: 9789811923074
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9b33aa8ad69d93b842d384ed0b6eb13
https://doi.org/10.1007/978-981-19-2308-1_36
https://doi.org/10.1007/978-981-19-2308-1_36
Autor:
Pharyanshu Kachhawa, Shivanshu Mishra, Amber Kumar Jain, Rajiv Ranjan Thakur, Nidhi Chaturvedi
Publikováno v:
2020 5th IEEE International Conference on Emerging Electronics (ICEE).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab4b794e2bb450b7281231ecf69bb8d1
https://doi.org/10.1109/icee50728.2020.9776649
https://doi.org/10.1109/icee50728.2020.9776649
Autor:
Pharyanshu Kachhawa, Rajiv Ranjan Thakur, Nidhi Chaturvedi, Kuldip Singh, Amber Kumar Jain, Shivanshu Mishra
Publikováno v:
Sensors and Actuators A: Physical. 332:113119
We have developed a fast and simplistic AlGaN/GaN high electron mobility transistor (HEMT) for the detection of heavy metals such as mercury, lead, copper and zinc in water with a dynamic range of 1 nM to 1 mM. Four device designs have been fabricate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e07a5480516b4ac19ede747052eb0bab
https://doi.org/10.1016/j.sna.2021.113119
https://doi.org/10.1016/j.sna.2021.113119
Publikováno v:
A TWO-DAY CONFERENCE ON FLEXIBLE ELECTRONICS FOR ELECTRIC VEHICLES.
One-third of total carbon footprint in the world is being caused by conventional combustion-based transportation system. To reduce these carbon footprints various renewable energy sources-based transportation mechanism is innovated with less maintena
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a864bd2580c51b7c3daa04141076d5fe
https://doi.org/10.1063/5.0031314
https://doi.org/10.1063/5.0031314
Autor:
Devanshu Saxena, Pharyanshu Kachhawa, Amber Kumar Jain, Nidhi Chaturvedi, Rajiv Ranjan Thakur, Ashok Chauhan, D. K. Kharbanda, P. K. Khanna, Richard Lossy, Shivanshu Mishra, Kuldip Singh, Joachim Wuerfl
Publikováno v:
Sensors and Actuators A: Physical. 302:111799
In this paper, a GaN-high electron mobility transistor (HEMT) based sensor is designed, fabricated and characterized for polar liquid sensing. The fabricated HEMT sensor chip is packaged by using low temperature co-fired ceramic (LTCC) technique. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9034329a494add74686ae92812c43500
https://doi.org/10.1016/j.sna.2019.111799
https://doi.org/10.1016/j.sna.2019.111799