Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Amaury Gendron-Hansen"'
Autor:
Avinash Srikrishnan Kashyap, Dumitru Sdrulla, Yi Fan Jiang, Amaury Gendron-Hansen, Changsoo Hong, John May, Bruce Odekirk
Publikováno v:
Materials Science Forum. 1004:822-829
In this paper, we present a new family of 3300 V silicon carbide (SiC) Schottky barrier diodes (SBDs) and power MOSFETs. The main design requirements are discussed with an emphasis on the design rules to improve the long-term reliability. Basic stati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57a1a57fbc7d53364ff05c8f04d4ed31
https://doi.org/10.4028/www.scientific.net/msf.1004.822
https://doi.org/10.4028/www.scientific.net/msf.1004.822
Autor:
Amaury Gendron-Hansen, Avinash Srikrishnan Kashyap, Dumitru Sdrulla, Linda Starr, Bruce Odekirk
Publikováno v:
Materials Science Forum. 924:585-588
A state-of-the art family of 1200 V junction barrier Schottky (JBS) diodes was developed. These devices are highly competitive in switching applications thanks to low specific series resistance (1.8 mΩ.cm2 at current rating) and low capacitive charg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7d6cc299975193d46f45c9cf3f57be9
https://doi.org/10.4028/www.scientific.net/msf.924.585
https://doi.org/10.4028/www.scientific.net/msf.924.585
Autor:
Bruce Odekirk, Yi Fan Jiang, Avinash Srikrishnan Kashyap, Dumitru Sdrulla, Amaury Gendron-Hansen, Changsoo Hong, John May, Dennis Meyer
Publikováno v:
2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
A leading-edge generation of 700 V SiC MOSFETs is benchmarked against commercial silicon (Si) super-junction (SJ) MOSFETs. We report a specific R DS, ON of 3.1 m Ω. cm2, three times lower than for state-of-the-art Si SJ MOSFETs. For the same functio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00992b0980627feab57c944f75d5eee3
https://doi.org/10.1109/wipda46397.2019.8998881
https://doi.org/10.1109/wipda46397.2019.8998881
Autor:
Shesh Mani Pandey, Konstantin Korablev, Peter Zeitzoff, Sudarshan Narayanan, Amaury Gendron-Hansen, Edmund Banghart, Francis Benistant
Publikováno v:
Solid-State Electronics. 123:44-50
A novel TCAD conductance integration method is presented to evaluate and extract the channel resistance as well as the three-dimensional (3D) parasitic resistance components in a FinFET device. It is shown that results with this method agree well wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32744fe2e64d527e0ca76e226185e840
https://doi.org/10.1016/j.sse.2016.05.018
https://doi.org/10.1016/j.sse.2016.05.018
Autor:
Amaury Gendron-Hansen, Bruce Odekirk, William Brower, Laird Thornhill, Dumitru Sdrulla, Avinash Srikrishnan Kashyap
Publikováno v:
2018 IEEE Energy Conversion Congress and Exposition (ECCE).
A test procedure for repetitive unclamped inductive switching (R-UIS) is presented and the results are reported for state-of-the-art 4H-SiC Schottky barrier diodes (SBDs) and MOSFETs. The energies at failure are 8.3, 8.9, and 10.3 J/cm2 for SBD parts
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e0029a2f36f44cd71fe397c5acb876b
https://doi.org/10.1109/ecce.2018.8557909
https://doi.org/10.1109/ecce.2018.8557909
Autor:
Amaury Gendron-Hansen, Ed Maxwell, Bruce Odekirk, Faheem Faheem, In-Hwan Ji, Avinash Srikrishnan Kashyap, Dumitru Sdrulla, Changsoo Hong, Mingyu Lee
Publikováno v:
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).
A novel 1200 V, 80 mΩ 4-H SiC power MOSFET with a shallow step p-body has been proposed for applications with highly rugged requirements. The innovative p-body design mitigates the problems arising due to the electric-field concentration at the corn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84372cefee0f1bf412671c0bfd24c720
https://doi.org/10.23919/ispsd.2017.7988995
https://doi.org/10.23919/ispsd.2017.7988995
Autor:
Amaury Gendron-Hansen, Konstantin Korablev, Francis Benistant, Jin Cho, James Egley, Ivan Chakarov
Publikováno v:
2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
In this paper, we analyze the mechanical stress induced from source/drain embedded SiGe (eSiGe) in multiple generations of FinFET technologies. By leveraging TCAD simulations, we show that high stress over the entire fin height could be achieved with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::620fe3f41e69a211141c98fdcb798d61
https://doi.org/10.1109/sispad.2015.7292349
https://doi.org/10.1109/sispad.2015.7292349