Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Amare Benor"'
Publikováno v:
ACS Omega. 8:15181-15192
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50a1d9da52ffc194f6f052b4bb722b99
https://doi.org/10.1021/acsomega.3c00170
https://doi.org/10.1021/acsomega.3c00170
Publikováno v:
ACS Applied Nano Materials. 5:6505-6512
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a2335257270cd119a0cd5cdbaa3657a
https://doi.org/10.1021/acsanm.2c00602
https://doi.org/10.1021/acsanm.2c00602
Publikováno v:
MRS Advances. 4:2441-2451
The patterning of gold and silver micro and nanostructures on rigid and flexible substrates is investigated by microcontact printed thiol based self-assembled monolayers. The aspect ratio of the noble metal micro and nanostructures is determined by i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16a9dc8e7a833249db291271100a002b
https://doi.org/10.1557/adv.2019.237
https://doi.org/10.1557/adv.2019.237
Autor:
Amare Benor
Publikováno v:
Materials Science and Engineering: B. 228:183-189
The rate of oxide formation on silicon was investigated by in situ I–V measurements, one after the other within 300 s, and as a result the current or I–V gap was used to compare the relative oxidation rate during pore formation at different anodi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68ff01dbaf1b8770d48e4d195f62ce63
https://doi.org/10.1016/j.mseb.2017.11.015
https://doi.org/10.1016/j.mseb.2017.11.015
Autor:
Amare Benor
Publikováno v:
Journal of Nanomaterials, Vol 2017 (2017)
The rate of oxide formation during growth of pores structures on silicon was investigated by in situ I-V measurements. The measurements were designed to get two I-V curves in a short time (total time for the two measurements was 300 seconds) taking i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::88b5668de3d19e349003ee13a3dd8d82
https://doaj.org/article/4853962826794d43a56ae441c5d3d64e
https://doaj.org/article/4853962826794d43a56ae441c5d3d64e
Publikováno v:
Ethiopian Journal of Science and Technology; Vol 9, No 2 (2016); 113-122
This study investigated the effect of phosphorus dopant concentration on mobility of crystalline silicon (c-Si). It considers different temperature ranges, from 100 K to 500 K, and dopant concentration from 10 12 cm -3 to 10 20 cm -3 in relation to i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2c040c22116c6c7e2592bbc31606086f
https://www.ajol.info/index.php/ejst/article/view/144305
https://www.ajol.info/index.php/ejst/article/view/144305
Autor:
Kristopher O. Davis, Wei Zhou, Ümit Alver, Rodica Krueger, Nicoleta Sorloaica-Hickman, Amare Benor Belay
Publikováno v:
IEEE Journal of Photovoltaics. 2:148-153
The effect of ultraviolet (UV)-light ozone exposure on phenyl-C61-butyric acid methyl ester (PC61BM) is studied using solid-state modification of the material. In this study, solution processed PCBM films that have been deposited and dried over glass
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3255f5615f50c30c0336ed5dfd047387
https://doi.org/10.1109/jphotov.2012.2183579
https://doi.org/10.1109/jphotov.2012.2183579
Publikováno v:
Organic Electronics. 11:831-835
A patterning method was developed that allows for combining the advantages of a low cost microcontact printing process on rigid and flexible substrates with the advantages of conventional semiconductor processing. The patterning approach combines pri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc6b3d294f96922e25eebd903b35dd0e
https://doi.org/10.1016/j.orgel.2010.01.025
https://doi.org/10.1016/j.orgel.2010.01.025
Publikováno v:
Organic Electronics. 11:938-945
The efficiency improvement of fluorescent organic light-emitting diodes (OLEDs) is achieved by tuning the work function of a hole-injection layer (HIL) of poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS). This tuning is achieved b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bda2d2fc42532b26d733d468bb74e121
https://doi.org/10.1016/j.orgel.2010.02.014
https://doi.org/10.1016/j.orgel.2010.02.014
Publikováno v:
Organic Electronics. 11:626-631
The scaling behavior and the influence of the device geometry on the switching speed of organic thin film transistors were investigated. Thiophene transistors were characterized and the influence of contact effects and overlap capacitance was studied
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e8a05e419b5401f791cff78fdfa179a
https://doi.org/10.1016/j.orgel.2010.01.002
https://doi.org/10.1016/j.orgel.2010.01.002