Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Amani S. Almuslem"'
Autor:
Joanna M. Nassar, Sherjeel M. Khan, Diego Rosas Villalva, Maha M. Nour, Amani S. Almuslem, Muhammad M. Hussain
Publikováno v:
npj Flexible Electronics, Vol 2, Iss 1, Pp 1-12 (2018)
Flexible electronics: plants can now wear sensors The application of flexible electronics has been shifted from epidermal sensors to the surface of individual plant for microclimate and growth condition monitoring. Prof M. M. Hussain and colleagues f
Externí odkaz:
https://doaj.org/article/7bd8eb83a98649eeab1902766f77860c
Autor:
Arwa T. Kutbee, Rabab R. Bahabry, Kholod O. Alamoudi, Mohamed T. Ghoneim, Marlon D. Cordero, Amani S. Almuslem, Abdurrahman Gumus, Elhadj M. Diallo, Joanna M. Nassar, Aftab M. Hussain, Niveen M. Khashab, Muhammad M. Hussain
Publikováno v:
npj Flexible Electronics, Vol 1, Iss 1, Pp 1-8 (2017)
Bioelectronics: A flexible micro-battery for healthcare There is an increasing demand for advanced healthcare electronics. That can be powered by physically flexible, biocompatible and high performance energy storage devices. However, existing techno
Externí odkaz:
https://doaj.org/article/69598d8d40b144f6972bffe8556cadfa
Publikováno v:
Advanced Materials Technologies. 4:1970050
Publikováno v:
Advanced Materials Technologies. 4:1900145
Autor:
Muhammad Mustafa Hussain, Amani S. Almuslem, Elhadj M. Diallo, Nimer Wehbe, Arwa T. Kutbee, Rabab R. Bahabry, Tahir Yapici, Amir Hanna
Publikováno v:
Applied Physics Letters. 110:074103
In the recent past, with the advent of transient electronics for mostly implantable and secured electronic applications, the whole field effect transistor structure has been dissolved in a variety of chemicals. Here, we show simple water soluble nano
Autor:
Muhammad Mustafa Hussain, G. A. Torres Sevilla, Abdurrahman Gumus, Melvin E. Cruz, Amani S. Almuslem, Aftab M. Hussain
Publikováno v:
Applied Physics Letters. 108:094102
Thinned silicon based complementary metal oxide semiconductor (CMOS) electronics can be physically flexible. To overcome challenges of limited thinning and damaging of devices originated from back grinding process, we show sequential reactive ion etc