Zobrazeno 1 - 10
of 896
pro vyhledávání: '"Amand, T"'
Autor:
Ren, L., Robert, C., Glazov, M. M., Semina, M. A., Amand, T., Lombez, L., Lagarde, D., Taniguchi, T., Watanabe, K., Marie, X.
We have investigated the exciton fine structure in atomically thin WSe2 -based van der Waals heterostructures where the density of optical modes at the location of the semiconductor monolayer can be tuned. The energy splitting $\Delta$ between the br
Externí odkaz:
http://arxiv.org/abs/2303.17880
Autor:
Beret, D., Ren, L., Robert, C., Foussat, L., Renucci, P., Lagarde, D., Balocchi, A., Amand, T., Urbaszek, B., Watanabe, K., Taniguchi, T., Marie, X., Lombez, L.
We investigate the diffusion process of negatively charged excitons (trions) in WSe2 transition metal dichalcogenide monolayer. We measure time-resolved photoluminescence spatial profiles of these excitonic complexes which exhibit a non-linear diffus
Externí odkaz:
http://arxiv.org/abs/2208.00734
We study theoretically nonlinear valley polarization dynamics of excitons in atom-thin semiconductors. The presence of significant polarization slows down valley relaxation due to an effective magnetic field resulting from exciton-exciton interaction
Externí odkaz:
http://arxiv.org/abs/2204.04622
Autor:
Aguirre-Perez, A., Joshya, R. S., Carrère, H., Marie, X., Amand, T., Balocchi, A., Kunold, A.
We demonstrate the application of a two stage machine learning algorithm that enables to correlate the electrical signals from a GaAs$_x$N$_{1-x}$ circular polarimeter with the intensity, degree of circular polarization and handedness of an incident
Externí odkaz:
http://arxiv.org/abs/2110.08284
Autor:
Joshya, R. S., Carrère, H., Ibarra-Sierra, V. G., Sandoval-Santana, J. C., Kalevich, V. K., Ivchenko, E. L., Marie, X., Amand, T., Kunold, A., Balocchi, A.
The detection of light helicity is key to several research and industrial applications from drugs production to optical communications. However, the direct measurement of the light helicity is inherently impossible with conventional photodetectors ba
Externí odkaz:
http://arxiv.org/abs/2102.13399
Autor:
Ibarra-Sierra, V. G., Sandoval-Santana, J. C., Joshya, R. S., Carrère, H., Bakaleinikov, L. A., Kalevich, V. K., Ivchenko, E. L., Marie, X., Amand, T., Balocchi, A., Kunold, A.
Publikováno v:
Phys. Rev. Applied 15, 064040 (2021)
We propose and numerically simulate an optoelectronic compact circular polarimeter. It allows to electrically measure the degree of circular polarization and light intensity at room temperature for a wide range of incidence angles in a single shot. T
Externí odkaz:
http://arxiv.org/abs/2102.10208
Autor:
Barate, P., Liang, S., Zhang, T. T., Frougier, J., Vidal, M., Renucci, P., Devaux, X., Xu, B., Jaffrès, H., George, J. M., Marie, X., Hehn, M., Mangin, S., Zheng, Y., Amand, T., Tao, B., Han, X. F., Wang, Z., Lu, Y.
Publikováno v:
Applied Physics Letters, 105, 012404 (2014)
An efficient electrical spin injection into an InGaAs/GaAs quantum well light emitting diode is demonstrated thanks to a CoFeB/MgO spin injector. The textured MgO tunnel barrier is fabricated by two different techniques: sputtering and molecular beam
Externí odkaz:
http://arxiv.org/abs/2004.03292
Autor:
Robert, C., Han, B., Kapuscinski, P., Delhomme, A., Faugeras, C., Amand, T., Molas, M. R., Bartos, M., Watanabe, K., Taniguchi, T., Urbaszek, B., Potemski, M., Marie, X.
Excitons with binding energies of a few hundreds of meV control the optical properties of transition metal dichalcogenide monolayers. Knowledge of the fine structure of these excitons is therefore essential to understand the optoelectronic properties
Externí odkaz:
http://arxiv.org/abs/2002.03877
Autor:
Sandoval-Santana, J. C., Ibarra-Sierra, V. G., Carrère, H., Bakaleinikov, L. A., Kalevich, V. K., Ivchenko, E. L., Marie, X., Amand, T., Balocchi, A., Kunold, A.
Publikováno v:
Phys. Rev. B 101, 075201 (2020)
Spin dependent recombination in GaAsN offers many interesting possibilities in the design of spintronic devices mostly due to its astounding capability to reach conduction band electron spin polarizations close to 100% at room temperature. The mechan
Externí odkaz:
http://arxiv.org/abs/1910.03495
Publikováno v:
Phys. Rev. B 100, 041301 (2019)
We study theoretically intervalley coupling in transition-metal dichalcogenide monolayers due to electron interaction with short-wavelength phonons. We demonstrate that this intervalley polaron coupling results in (i) a renormalization of the conduct
Externí odkaz:
http://arxiv.org/abs/1904.02674