Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Amalraj Frank Wilson"'
Autor:
Dhasiyan, Arun Kumar1 (AUTHOR) arunkumar@nagoya-u.jp, Amalraj, Frank Wilson1 (AUTHOR) wilson008@gmail.com, Jayaprasad, Swathy1 (AUTHOR), Shimizu, Naohiro1 (AUTHOR), Oda, Osamu1 (AUTHOR), Ishikawa, Kenji1 (AUTHOR), Hori, Masaru1 (AUTHOR)
Publikováno v:
Scientific Reports. 5/13/2024, Vol. 14 Issue 1, p1-18. 18p.
Publikováno v:
In Journal of Crystal Growth 1 November 2020 549
Akademický článek
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Autor:
Osamu Oda, Makoto Sekine, Kyoichi Suguro, Yasuhiro Isobe, Amalraj Frank Wilson, Naohiro Shimizu, Takayuki Sakai, Masaru Hori, Naoto Miyashita, Hiroki Kondo, Kenji Ishikawa
Publikováno v:
Journal of Vacuum Science & Technology B. 37:061215
Nitrogen atoms are versatile for nitridation applications and do not lead to plasma-induced damage. Large-sized wafer processing demands a uniform supply of nitrogen atoms produced in a high-density very-high-frequency excited plasma of N2 without am
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97b793c40242f7a2a020b498663b8562
https://doi.org/10.1116/1.5114831
https://doi.org/10.1116/1.5114831
Autor:
Naohiro Shimizu, Amalraj Frank Wilson, Osamu Oda, Naoto Miyashita, Yi Lu, Dhasiyan Arun Kumar, Kyoichi Suguro, Takayuki Sakai, Makoto Sekine, Masaru Hori, Ichiro Mizushima, Nobuyuki Ikarashi, Naoharu Sugiyama, Kenji Ishikawa, Hiroki Kondo, Yasuhiro Isobe
Publikováno v:
Journal of Vacuum Science & Technology B. 37:031201
Epitaxial growth of GaN films at a low temperature of 800 °C was studied in radical-enhanced metal-organic chemical vapor deposition, focusing on the discharge region of the plasma of a mixture of N2 and H2 gases. The effect of plasma confinement on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58825751b15994e87eca7d60598aa26d
https://doi.org/10.1116/1.5083970
https://doi.org/10.1116/1.5083970
Akademický článek
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Publikováno v:
IEEE Transactions on Electron Devices. 60:3183-3189
A methodology for the evaluation of the electron trapping speed by combining real-time electroluminescence and the ON-resistance is proposed. In real-time electroluminescence measurements with the high sensitivity of a silicon-intensified CCD with lo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02956bf5e909cda5e4fa3b250d8c6e52
https://doi.org/10.1109/ted.2013.2273796
https://doi.org/10.1109/ted.2013.2273796
Autor:
Amalraj, Frank Wilson, Dhasiyan, Arun Kumar, Lu, Yi, Shimizu, Naohiro, Oda, Osamu, Ishikawa, Kenji, Kondo, Hiroki, Sekine, Makoto, Ikarashi, Nobuyuki, Hori, Masaru
Publikováno v:
AIP Advances; Nov2018, Vol. 8 Issue 11, pN.PAG-N.PAG, 5p
Publikováno v:
Applied Physics Express. 6:116601
The reliability of AlGaN/GaN high-electron-mobility transistors (HEMTs) on Si has been investigated using step-stress measurement and examined using scanning electron microscopy and atomic force microscopy. The illumination spots formed were confirme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa39586f3a68aa2b5bf19a6838d9a083
https://doi.org/10.7567/apex.6.116601
https://doi.org/10.7567/apex.6.116601
Publikováno v:
Applied Physics Express. 6:086504
The change in threshold voltage (Vth) in AlGaN/GaN high-electron-mobility transistors (HEMTs) on Si occurs during off-state bias stress. Raman spectroscopy shows that the GaN strain/stress changes with the increase in buffer and i-GaN thicknesses. Ou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9e8a637e8d1c207cd647f379cbb4baa
https://doi.org/10.7567/apex.6.086504
https://doi.org/10.7567/apex.6.086504