Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Amal Ikhlassi"'
Autor:
Gerard Sullivan, Amal Ikhlassi, Xingjun Wu, Jie Zhang, Jianmin Zheng, Rui-Rui Du, Yang-Zhi Chou, Lingjie Du
Publikováno v:
Nature Electronics. 4:573-578
Strong electron–electron interactions between adjacent nanoscale wires can lead to one-dimensional Coulomb drag, where current in one wire induces a voltage in the second wire via Coulomb interactions. This effect creates challenges for the develop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::551426cab04ba3505de42f7974b5744f
https://doi.org/10.1038/s41928-021-00603-y
https://doi.org/10.1038/s41928-021-00603-y
Publikováno v:
Physical Review B. 100
We study the transport properties of an electron-hole double layer consisting of barrier-separated InAs/InGaSb quantum wells. We focus on measurements of four-terminal resistivity of a Hall-bar sample as a function of electron $(n)$ and hole $(p)$ de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::852f771b249ab32cfc95089e6d3b8abd
https://doi.org/10.1103/physrevb.100.165309
https://doi.org/10.1103/physrevb.100.165309
Autor:
Peter Dreiske, Jongwoo Kim, Elizabeth Rangel, JihFen Lei, Amal Ikhlassi, Henry Yuan, Joe Kimchi
Publikováno v:
Infrared Technology and Applications XLIV.
Teledyne Judson Technologies (TJT) has developed high operating temperature (HOT) mid-wavelength infrared (MWIR) photodetectors based on InAs/InAsSb type-II superlattice (T2SL) with an electron barrier. Large area discrete detectors of 0.25mm and 1mm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46111ca65d0f7c5a3840a3b9980fef88
https://doi.org/10.1117/12.2303973
https://doi.org/10.1117/12.2303973
512$\,\times\,$512 Individually Addressable MWIR LED Arrays Based on Type-II InAs/GaSb Superlattices
Autor:
John P. Prineas, Amal Ikhlassi, Gerry Sullivan, Rodney McGee, Keith W. Goossen, John Lawler, Jonathon T. Olesberg, Jonathan Dickason, Dennis Norton, L. M. Murray, Nicholas Waite, Thomas F. Boggess, Fouad Kiamilev, Edwin J. Koerperick
Publikováno v:
IEEE Journal of Quantum Electronics. 49:753-759
Single element 33×33 μm2 InAs/GaSb superlattice light-emitting diodes (SLEDs) operating at 77 K with peak emission at approximately 4.6 μm are demonstrated. A peak radiance of 2.2 W/cm2/sr was measured corresponding to an apparent temperature grea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1ea677d48b724fefda4f7347c5cbb4b
https://doi.org/10.1109/jqe.2013.2272878
https://doi.org/10.1109/jqe.2013.2272878
Autor:
Chi Zhang, Rui-Rui Du, Zhongdong Han, Lingjie Du, Kai Chang, Xingjun Wu, Wenkai Lou, Xiaoxue Liu, Gerard Sullivan, Amal Ikhlassi, Tingxin Li
Publikováno v:
Physical review letters. 119(5)
We report on a class of quantum spin Hall insulators (QSHIs) in strained-layer InAs/GaInSb quantum wells, in which the bulk gaps are enhanced by up to five folds as compared to the binary InAs/GaSb QSHI. Remarkably, with consequently increasing edge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1218b41c8a5e19907c63ead9928f7e8b
https://pubmed.ncbi.nlm.nih.gov/28949710
https://pubmed.ncbi.nlm.nih.gov/28949710
Publikováno v:
Journal of Electronic Materials. 39:1001-1006
Strained-layer superlattices (SLS) based on type II InAs/Ga(In)Sb materials are a rapidly maturing technology and are theoretically predicted to exceed the dark-current performance of state-of-the-art HgCdTe. A substantial effort is underway at Teled
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c1e86536f9b4dc1d6ad7a5196a040d6
https://doi.org/10.1007/s11664-010-1091-x
https://doi.org/10.1007/s11664-010-1091-x
Autor:
Berinder Brar, Liesl Folks, G. Sullivan, Bruce Alvin Gurney, Mark Field, E. Marinero, S. Maat, J. A. Katine, Sergio Nicoletti, T.D. Boone, Amal Ikhlassi
Publikováno v:
IEEE Transactions on Magnetics. 42:3270-3272
Extraordinary magnetoresistance (EMR) devices have been fabricated and characterized at various magnetic fields, operating temperatures, and current excitations. These devices are comprised of nonmagnetic high mobility semiconductors and low resistan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ae6dee12235d1cb2161fbc9dc273374
https://doi.org/10.1109/tmag.2006.879149
https://doi.org/10.1109/tmag.2006.879149
Autor:
Liesl Folks, Jordan A. Katine, M Nishioka, Bruce Alvin Gurney, G. Sullivan, Mark Field, Amal Ikhlassi, A S Troup, Michael Grobis, Thomas Dudley Boone
Publikováno v:
Journal of physics. Condensed matter : an Institute of Physics journal. 21(25)
We have measured the room temperature response of nanoscale semiconductor Hall crosses to local applied magnetic fields under various local electric gate conditions using scanning probe microscopy. Near-surface quantum wells of AlSb/InAs/AlSb, locate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fc50582389d0135f64d2b53a71d99d03
https://pubmed.ncbi.nlm.nih.gov/21828442
https://pubmed.ncbi.nlm.nih.gov/21828442
Autor:
Michael E. Flatté, H. Yang, C. H. Grein, G. Sullivan, Mark C. Field, M. Zhong, M. Weimer, Amal Ikhlassi
Publikováno v:
SPIE Proceedings.
InAs/GaSb superlattices are a promising technology for long-wave and very-long-wave infrared photodetectors. Present detectors at these wavelengths are mostly built using bulk HgCdTe (MCT) alloys, where the bandgap is controlled by the mercury-cadmiu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8cad12b1dab9d0feb6bb213de39e4666
https://doi.org/10.1117/12.639442
https://doi.org/10.1117/12.639442
Autor:
J. Bergman, J. R. Waldrop, H. Yang, Michael E. Flatté, M. Zhong, C. H. Grein, M. Weimer, G. Sullivan, K. Mahalingam, Amal Ikhlassi, R. E. DeWames
Publikováno v:
SPIE Proceedings.
InAs-GaSb strained layer superlattices (SLSs) form a narrow band gap material whose cut-off wavelength can be tuned from 3 um to beyond 30 um. Theory predicts that in the LWIR and VLWIR, the SLS narrow bandgap layer structures can be engineered to re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52dcab55a510173095d80bad7dace456
https://doi.org/10.1117/12.607360
https://doi.org/10.1117/12.607360