Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Alyssa L. Mock"'
Autor:
Habib Ahmad, Ozgur Aktas, M.G. Ancona, Travis J. Anderson, Cem Basceri, Josephine Chang, Bikramjit Chatterjee, Zhe Cheng, Sukwon Choi, Volker Cimalla, W. Alan Doolittle, Tatyana I. Feygelson, Brian Foley, Daniel Francis, John T. Gaskins, Thomas Gerrer, Ashutosh Giri, Samuel Graham, Aman Haque, Eric Heller, Karl D. Hobart, Mark W. Holtz, Patrick E. Hopkins, Robert Howell, Zahabul Islam, Pavel L. Komarov, Martin Kuball, Mark E. Law, Lucas Lindsay, Elison Matioli, Callum Middleton, Codie Mishler, Alyssa L. Mock, Vladimir Odnoblyudov, David H. Olson, Bradford B. Pate, Georges Pavlidis, S.J. Pearton, Edwin L. Piner, Peter E. Raad, Fan Ren, Travis L. Sandy, Ribhu Sharma, Jingjing Shi, Daniel Shoemaker, Aditya Sood, Joseph A. Spencer, Marko J. Tadjer, John A. Tomko, Remco van Erp, Hiu-Yung Wong, Minghan Xian, Yuhao Zhang
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::787bcc0ab72fa9bfb466044ab766f477
https://doi.org/10.1016/b978-0-12-821084-0.09990-x
https://doi.org/10.1016/b978-0-12-821084-0.09990-x
Autor:
Rachael L. Myers-Ward, Daniel J. Pennachio, Karl D. Hobart, Alan G. Jacobs, Andrei Osinsky, Alyssa L. Mock, Jenifer Hajzus, Jaime A. Freitas, Fikadu Alema, Mona A. Ebrish, Jeffrey M. Woodward, James C. Gallagher, Travis J. Anderson, Charles R. Eddy, Marko J. Tadjer, Jennifer K. Hite, Evan R. Glaser, Neeraj Nepal, Michael A. Mastro
Publikováno v:
Oxide-based Materials and Devices XII.
Ga2O3 is the only ultra-wide bandgap semiconductor with melt-growth substrate technology similar to that of Si, heterostructure device technology similar to that of the III-Nitride family, and high growth rate (GR) epitaxial technologies such as MOCV
Autor:
Vanya Darakchieva, Megan Stokey, Mathias Schubert, A. Papamichail, Sean Knight, Rafał Korlacki, Alyssa L. Mock
Publikováno v:
Physical Review B. 102
Strain-stress relationships for physical properties are of interest for heteroepitaxial material systems, where strain and stress are inherent due to thermal expansion and lattice mismatch. We report linear perturbation theory strain and stress relat
Autor:
Eric N, Jin, Matthew T, Hardy, Alyssa L, Mock, John L, Lyons, Alan R, Kramer, Marko J, Tadjer, Neeraj, Nepal, D Scott, Katzer, David J, Meyer
Publikováno v:
ACS applied materialsinterfaces. 12(46)
ScAlN is an emergent ultrawide-band-gap material with both a high piezoresponse and demonstrated ferroelectric polarization switching. Recent demonstration of epitaxial growth of ScAlN on GaN has unlocked prospects for new high-power transistors and
Autor:
Joseph A. Spencer, Alyssa L. Mock, Alan G. Jacobs, Mathias Schubert, Yuhao Zhang, Marko J. Tadjer
Publikováno v:
Applied Physics Reviews. 9:011315
This Review highlights basic and transition metal conducting and semiconducting oxides. We discuss their material and electronic properties with an emphasis on the crystal, electronic, and band structures. The goal of this Review is to present a curr
Autor:
Andrew D. Koehler, Marko J. Tadjer, Akito Kuramata, Daiki Wakimoto, Michael A. Mastro, Alyssa L. Mock, James C. Gallagher, Alan G. Jacobs, Mona A. Ebrish, Karl D. Hobart, Kohei Sasaki, Travis J. Anderson
Publikováno v:
Journal of Vacuum Science & Technology A. 39:033402
Heterojunction field-effect transistors based on the β-(AlxGa1−x)2O3/Ga2O3 heterostructure grown by ozone-assisted molecular beam epitaxy were demonstrated for the first time. Al composition ratios in the 14%–23% range were validated using x-ray
Autor:
Evan R. Glaser, Marko J. Tadjer, Akito Kuramata, Eric M. Jackson, James C. Culbertson, James C. Gallagher, Jaime A. Freitas, Marc H. Weber, Kenneth J. Schmieder, Alyssa L. Mock, Nadeemullah A. Mahadik, Boris N. Feigelson
Publikováno v:
Journal of Physics D: Applied Physics. 53:504002
Single crystal (−201) β-Ga2O3 substrates doped with Si and Sn have been thermally annealed in N2 and O2 atmospheres. Structural and electrical properties evaluation was performed via a number of experimental methods in order to quantify the effect
We derive from an eigendielectric displacement vector summation approach the frequency order of the polar phonon modes and the polarization-dependent structure of the reststrahlen bands within the monoclinic plane of materials with monoclinic crystal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c4f73f0355dc1a3a8d01922332c53d66
Autor:
Sean Knight, Rafał Korlacki, Alyssa L. Mock, James S. Speck, Vanya Darakchieva, Matthew Hilfiker, Akhil Mauze, Ufuk Kilic, Mathias Schubert, Yuewei Zhang
Publikováno v:
Applied Physics Letters. 114:231901
A set of monoclinic β-(AlxGa1–x)2O3 films coherently grown by plasma-assisted molecular beam epitaxy onto (010)-oriented β-Ga2O3 substrates for compositions x ≤ 0.21 is investigated by generalized spectroscopic ellipsometry at room temperature