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Publikováno v:
2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
In this paper, a method to detect shorts at the gates of the storage node of a 6T SRAM bit cell via atomic force probing (AFP) at the Via 1 level is discussed. This method is useful for the preservation of physical evidence as well as to ease the pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fad1a54ec11564d6605b0a636426c1b3
https://doi.org/10.1109/ipfa.2017.8060219
https://doi.org/10.1109/ipfa.2017.8060219
