Zobrazeno 1 - 10
of 83
pro vyhledávání: '"Alwan M. Alwan"'
Publikováno v:
Results in Chemistry, Vol 10, Iss , Pp 101727- (2024)
In this study, two types of nano photonics sensors silver nanoparticles/porous silicon (AgNPs/PSi) and silver nanoparticles/multi wall carbon nanotube/porous silicon (AgNPs/MWCNT/PSi) were formed and tested extensively. The porous silicon (PSi) subst
Externí odkaz:
https://doaj.org/article/d09c1fbadce1407e83c410eeddebdb0b
Autor:
Russul M. shehab, Alwan M. Alwan
Publikováno v:
Engineering and Technology Journal, Vol 33, Iss 3B, Pp 556-563 (2015)
Electrochemical etching processes at different current densities were used to prepare nano porous silicon with different porosities.A series of nanostructures silver/ nanoporous silicon (NAg/NPSi)active substrate was prepared by an immersion-platingm
Externí odkaz:
https://doaj.org/article/f1e08633782d4e7d81a7fcd39d84f951
Autor:
Alwan M. Alwan, Russul M. shehab
Publikováno v:
Engineering and Technology Journal, Vol 33, Iss 2B, Pp 318-325 (2015)
In this research Photo-electrochemical etching processwas used to preparenano porous silicon from n-type Si.The characteristics of Silvered porous silicon samples(active-substrate), were studied as substrates in terms of surface-enhanced Raman scatte
Externí odkaz:
https://doaj.org/article/bb0e06c248924f2e883bdda5a82b661b
Autor:
Alwan M. Alwan, Suaad M. Ali
Publikováno v:
Engineering and Technology Journal, Vol 33, Iss 1B, Pp 152-159 (2015)
Laser Assisted Etching (LAE) technique with short laser wavelength was used to provide a gradient-porosity porous silicon (GPSi) layer. Morphological aspects, reflectivity and photoelectric properties of (GPSi) layer were studied based on a bare sola
Externí odkaz:
https://doaj.org/article/54ec491b476c493aa46b999ec4bb74e7
Publikováno v:
Science Journal of University of Zakho, Vol 1, Iss 2, Pp 874-881 (2013)
The present work is the study of the dark current density for porous silicon which is prepared by photo-electrochemical etching for n-type silicon by using laser power density of (10mw/cm2)and wavelength(650nm) under different anodization time(50,60)
Externí odkaz:
https://doaj.org/article/96f046ccaf4d453b87eeb3306a1015fe
Autor:
Alwan M. Alwan, Muna. S. M. Jawad
Publikováno v:
Engineering and Technology Journal, Vol 31, Iss 3B, Pp 391-399 (2013)
In this work, we present results of photoluminescence (PL) properties of fully (p-n) porous silicon device. Porous silicon layer has been prepared by Photo-electrochemical etching under different etching time of abrupt (p-n) silicon junction. The pho
Externí odkaz:
https://doaj.org/article/446d217f6f1d41a7b739b0d7f7c36863
Publikováno v:
Engineering and Technology Journal, Vol 28, Iss 2, Pp 314-321 (2010)
This paper reports morphological properties of porous silicon and oxidizedporous silicon, prepared by photo electrochemical etching from n-type silicon wafers asa function of experimental parameters. Scanning electron microscopic (SEM)Observations of
Externí odkaz:
https://doaj.org/article/bab765cb416d4f9c9b62c6b4bfbb130b
Publikováno v:
Engineering and Technology Journal, Vol 27, Iss 11, Pp 2286-2291 (2009)
In this research we studying the sensitivity of a porous silicon photo detector, wefound it improved through rapid thermal oxidation processes. Under our optimumpreparation conditions, photocurrent can reach about 3408 μA (under power density 100mW/
Externí odkaz:
https://doaj.org/article/ada595271105428fae164b8106191b1e
Autor:
Alwan M. Alwan
Publikováno v:
Engineering and Technology Journal, Vol 25, Iss 10, Pp 1149-1153 (2007)
In this work, as Study on the structural and electrical properties ofPbo.9Sn0.1Se/Si hetrojunction was made by depositing compound of Lead, Tinand Selenide film on Si by thermal evaporation.XRD diffraction analysis of the film, shows the dominant cry
Externí odkaz:
https://doaj.org/article/01848fdf9cea499b8195d9a4960b8946
Autor:
Alwan M. Alwan
Publikováno v:
Engineering and Technology Journal, Vol 25, Iss 8, Pp 1023-1027 (2007)
In this paper, a porous silicon (PS) layer is investigated as a sensing materialto detect the organic vapors with low concentration. The structure of theprepared sensor consists of thin Au /PS/n-Si/Au thick where the PS is etchedphoto -chemically. Th
Externí odkaz:
https://doaj.org/article/9e61fc6cac764edebb516bce903bbe97