Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Alvaro Palomino"'
Autor:
Trevor P. Almeida, Alvaro Palomino, Steven Lequeux, Victor Boureau, Olivier Fruchart, Ioan Lucian Prejbeanu, Bernard Dieny, David Cooper
Publikováno v:
APL Materials, Vol 10, Iss 6, Pp 061104-061104-11 (2022)
Perpendicular shape anisotropy (PSA) and double magnetic tunnel junctions (DMTJs) offer practical solutions to downscale spin-transfer-torque Magnetic Random-Access Memory (STT-MRAM) beyond 20 nm technology nodes, while retaining their thermal stabil
Externí odkaz:
https://doaj.org/article/f18affcd38e1400d918d6ae237b98a7e
Quantitative Visualization of Thermally Enhanced Perpendicular Shape Anisotropy STT-MRAM Nanopillars
Autor:
Trevor P. Almeida, Steven Lequeux, Alvaro Palomino, Ricardo C. Sousa, Olivier Fruchart, Ioan-Lucian Prejbeanu, Bernard Dieny, Aurélien Masseboeuf, David Cooper
Publikováno v:
Nano Letters
Nano Letters, 2022, 22 (10), pp.4000. ⟨10.1021/acs.nanolett.2c00597⟩
Nano Letters, 2022, 22 (10), pp.4000. ⟨10.1021/acs.nanolett.2c00597⟩
International audience; Perpendicular shape anisotropy (PSA) offers a practical solution to downscale spin-transfer torque magnetoresistive random-access memory (STT-MRAM) beyond the sub-20 nm technology node while retaining thermal stability. Howeve
Autor:
Ricardo C. Sousa, Daniel S. Hazen, Nuno Caçoilo, Bruno M. S. Teixeira, Alvaro Palomino Lopez, Olivier Fruchart, David Salomoni, Stéphane Auffret, Laurent Vila, Ioan-Lucian Prejbeanu, Liliana D. Buda-Prejbeanu, Bernard Dieny
Publikováno v:
Spintronics XV.
Autor:
Trevor P. Almeida, Alvaro Palomino, Steven Lequeux, Victor Boureau, Olivier Fruchart, Ioan Lucian Prejbeanu, Bernard Dieny, David Cooper
Publikováno v:
APL Materials
APL Materials, 2022, 10 (6), pp.061104. ⟨10.1063/5.0096761⟩
APL Materials, 2022, 10 (6), pp.061104. ⟨10.1063/5.0096761⟩
Perpendicular shape anisotropy (PSA) and double magnetic tunnel junctions (DMTJ) offer practical solutions to downscale spin-transfer-torque Magnetic Random-Access Memory (STT-MRAM) beyond 20 nm technology nodes, whilst retaining their thermal stabil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::473f346d2ceb0a28018031c201989287
https://hal.science/hal-03648984v2/document
https://hal.science/hal-03648984v2/document
Autor:
David Cooper, Aurélien Massebouef, Olivier Fruchart, Ioan Lucian Prejbeanu, Richard Sousa, Steven Lequeux, Bernard Dieny, Alvaro Palomino, Trevor Almeida, N. Caçoilo
Publikováno v:
Microscopy and Microanalysis
Microscopy and Microanalysis, 2021, 27 (S1), pp.2170-2172. ⟨10.1017/S1431927621007819⟩
Microscopy and Microanalysis, 2021, 27 (S1), pp.2170-2172. ⟨10.1017/S1431927621007819⟩
Autor:
David Cooper, Bernard Dieny, Steven Lequeux, Alvaro Palomino, N. Caçoilo, Ricardo C. Sousa, Trevor Almeida, Ioan Lucian Prejbeanu
Publikováno v:
2021 IEEE International Memory Workshop (IMW)
2021 IEEE International Memory Workshop (IMW), May 2021, Dresden, Germany. pp.1-4, ⟨10.1109/IMW51353.2021.9439609⟩
2021 IEEE International Memory Workshop (IMW), May 2021, Dresden, Germany. pp.1-4, ⟨10.1109/IMW51353.2021.9439609⟩
The concept of Perpendicular Shape Anisotropy (PSA) spin transfer torque (STT) MRAM has been recently proposed as a solution to achieve downsize scalability of MRAM below sub-10 nm technology nodes, down to 3–4 nm cell size lateral dimensions. In c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e84c51343f80aba2d9b864f67c207093
https://eprints.gla.ac.uk/264954/1/264954.pdf
https://eprints.gla.ac.uk/264954/1/264954.pdf
Autor:
Stéphane Auffret, Ricardo C. Sousa, Alvaro Palomino, B. Dieny, I. Joumard, J. Marty, Blandine Ageron, Ioan Lucian Prejbeanu
Publikováno v:
Sustainable Materials and Technologies
Sustainable Materials and Technologies, 2021, pp.e00270. ⟨10.1016/j.susmat.2021.e00270⟩
Sustainable Materials and Technologies, Elsevier, 2021, pp.e00270. ⟨10.1016/j.susmat.2021.e00270⟩
Sustainable Materials and Technologies, 2021, pp.e00270. ⟨10.1016/j.susmat.2021.e00270⟩
Sustainable Materials and Technologies, Elsevier, 2021, pp.e00270. ⟨10.1016/j.susmat.2021.e00270⟩
Thanks to their unique combination of properties: non-volatility, speed, density and write endurance, spintronic memory called spin transfer-torque Magnetic Random Access Memory (STT-MRAM) is expected to play a major role in the future development of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dad66d63ff19ee3dcda866d2af0d96b6
https://hal.science/hal-03170821
https://hal.science/hal-03170821
Autor:
David Cooper, Eric Gautier, Lucian Prejbeanu, Ricardo C. Sousa, Jyotirmoy Chatterjee, Alvaro Palomino, Stéphane Auffret, Aurélien Masseboeuf, B. Dieny, Steven Lequeux, Victor Boureau, Laurent Vila, V. D. Nguyen
Publikováno v:
Nanoscale
Nanoscale, Royal Society of Chemistry, 2020, 12 (33), pp.17312-17318. ⟨10.1039/D0NR03353G⟩
Nanoscale, 2020, 12 (33), pp.17312-17318. ⟨10.1039/D0NR03353G⟩
Nanoscale, Royal Society of Chemistry, 2020, 12 (33), pp.17312-17318. ⟨10.1039/D0NR03353G⟩
Nanoscale, 2020, 12 (33), pp.17312-17318. ⟨10.1039/D0NR03353G⟩
International audience; The fabrication of muti-gigabit magnetic random access memory (MRAM) chips requires the patterning of magnetic tunnel junctions at very small dimensions (sub-30 nm) and very dense pitch. This remains a challenge due to the dif
Autor:
Almeida, Trevor P., Palomino, Alvaro, Lequeux, Steven, Boureau, Victor, Fruchart, Olivier, Prejbeanu, Ioan Lucian, Dieny, Bernard, Cooper, David
Publikováno v:
APL Materials; Jun2022, Vol. 10 Issue 6, p1-11, 11p
Publikováno v:
Bistua: Revista de la Facultad de Ciencias Básicas; 2006, Vol. 4 Issue 1, p3-9, 7p