Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Alvaro A. Instan"'
Autor:
Sandra Rodríguez-Villanueva, Frank Mendoza, Alvaro A. Instan, Ram S. Katiyar, Brad R. Weiner, Gerardo Morell
Publikováno v:
Nanomaterials, Vol 12, Iss 1, p 109 (2021)
We report the first direct synthesis of graphene on SiO2/Si by hot-filament chemical vapor deposition. Graphene deposition was conducted at low pressures (35 Torr) with a mixture of methane/hydrogen and a substrate temperature of 970 °C followed by
Externí odkaz:
https://doaj.org/article/d3fdb6457b354ac9b3772cbe5a3b6e2a
Autor:
Blanca Yamile Rosas, Alvaro A. Instan, Karuna Kara Mishra, Srungarpu Nagabhusan Achary, Ram S. Katiyar
Publikováno v:
Crystals, Vol 12, Iss 1, p 35 (2021)
The compound 0.9[KNbO3]-0.1[(BaNi1/2Nb1/2O3−δ] (KBNNO), a robust eco-friendly (lead-free) ferroelectric perovskite, has diverse applications in electronic and photonic devices. In this work, we report the dielectric, ferroelectric, and structural
Externí odkaz:
https://doaj.org/article/93283c14a9aa48b2ae31466c3c11cc38
Publikováno v:
Scientific Reports, Vol 10, Iss 1, Pp 1-11 (2020)
Scientific Reports
Scientific Reports
The discovery of single-phase multiferroic materials and the understanding of coupling mechanisms between their spin and polarization is important from the point of view of next generation logic and memory devices. Herein we report the fabrication, d
Publikováno v:
Applied Surface Science. 490:451-459
Highly oriented Pb(Zr0.53Ti0.47)0.90Sc0.10O3 (PZTS) thin films were deposited on La0.67Sr0.33MnO3 (LSMO) buffer layer coated on MgO (100) substrates by following two subsequent laser ablation processes in oxygen atmosphere employing pulse laser depos
Autor:
Alvaro A. Instan, Sita Dugu, Mikel B. Holcomb, James F. Scott, Dhiren K. Pradhan, Mohan K. Bhattarai, Shalini Kumari, Ram S. Katiyar
Publikováno v:
Applied Surface Science. 523:146459
We report a detailed investigation on magnetic and electrical properties of the multiferroic GaFeO3 (GFO) thin films grown on SrRuO3 (SRO) buffered SrTiO3 (1 1 1) substrates. The magnetic transition temperature (Tc) of GFO thin films is observed ∼2
Publikováno v:
Integrated Ferroelectrics. 166:140-149
Temperature stability of voltage tunability and figure of merit (FOM) were investigated for the pulsed laser deposited Ba0.6Sr0.4TiO3 (BST0.6) thin films on platinum coated silicon [Pt(111)/TiOx/SiOx/Si(100)] substrates. The structural and micro-stru
Autor:
K. K. Mishra, J. Marty Gregg, Jose A. Hernandez, Alvaro A. Instan, Shane J. McCartan, Ram S. Katiyar
Publikováno v:
Mishra, K, Hernandez, J, Instan, A, McCartan, S, Gregg, M & Katiyar, R S 2020, ' Lead palladium zirconate titanate: A room temperature nanoscale multiferroic thin film ', Journal of Applied Physics, vol. 127, 204104 . https://doi.org/10.1063/1.5143435
The discovery of single-phase multiferroic materials and the understanding of intriguing physics of the coupling mechanisms between their spin and polarization are important for the next generation of multifunctional devices. In this work, we report
Publikováno v:
Journal of Applied Physics. 126:134101
Dielectric thin film capacitors, storing large charge density, are useful in electric energy storing devices. Highly oriented lead-free BaZr0.20Ti0.80O3 (BZT20) thin films were grown on a conducting bottom layer La0.7Sr0.3MnO3 deposited on a MgO (100
Publikováno v:
Applied Physics Letters. 114:223902
Highly oriented 0.90[PbZr0.53Ti0.47]0.10[La0.80Sc0.20]O3-δ (PLZTS) thin films deposited on La0.67Sr0.33MnO3 (LSMO) coated MgO (100) substrates were grown by pulsed laser deposition technique. Temperature dependent dielectric measurements on metal-fe
Publikováno v:
ECS Meeting Abstracts. :71-71
Recently, energy storage capacitors research attention turned towards lead-free and eco-friendly dielectric BaTiO3. Many efforts have been made to improve the dielectric properties of the BTO thin film capacitors. Barium titanate is one of the most s