Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Aluminium scandium nitride"'
Publikováno v:
Micromachines, Vol 13, Iss 11, p 1961 (2022)
III-V solid solutions are sensitive to growth conditions due to their stochastic nature. The highly crystalline thin films require a profound understanding of the material properties and reliable means of their determination. In this work, we have in
Externí odkaz:
https://doaj.org/article/c8b6226e41704256b5b8404583ae2984
Autor:
Jingxiang Su, Simon Fichtner, Muhammad Zubair Ghori, Niklas Wolff, Md. Redwanul Islam, Andriy Lotnyk, Dirk Kaden, Florian Niekiel, Lorenz Kienle, Bernhard Wagner, Fabian Lofink
Publikováno v:
Micromachines, Vol 13, Iss 5, p 783 (2022)
In this work, we present a method for growing highly c-axis oriented aluminum scandium nitride (AlScN) thin films on (100) silicon (Si), silicon dioxide (SiO2) and epitaxial polysilicon (poly-Si) substrates using a substrate independent approach. The
Externí odkaz:
https://doaj.org/article/a29618bc8bf540fe8662e1dc9caa2f68
Autor:
Zukauskaite, Agne
Not so long ago, aluminium scandium nitride (AlScN) emerged as a material that possesses superior properties as compared to aluminium nitride (AlN). Substituting Al with Sc in AlN leads to a dramatic increase in the piezoelectric coefficient as well
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::b8eb17b5b71d11b8ab60b8f1fff4de45
https://publica.fraunhofer.de/handle/publica/443049
https://publica.fraunhofer.de/handle/publica/443049
Akademický článek
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Akademický článek
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Akademický článek
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Autor:
Cyril Baby Karuthedath, Mervi Paulasto-Kruckel, Abhilash Sebastian Thanniyil, Kristina Bespalova, Tuomas Pensala, Stefan Mertin, Glenn Ross
Publikováno v:
2020 IEEE International Ultrasonics Symposium (IUS)
Bespalova, K, Ross, G, Paulasto-Kröckel, M, Abhilash, T S, Karuthedath, C, Mertin, S & Pensala, T 2020, Temperature Stability of Electrode/AlScN Multilayer Systems for pMUT Process Integration . in 2020 IEEE International Ultrasonics Symposium (IUS) . IEEE Institute of Electrical and Electronic Engineers, IEEE International Ultrasonics Symposium, IEEE International Ultrasonics Symposium, IUS, Las Vegas, Nevada, United States, 7/09/20 . https://doi.org/10.1109/IUS46767.2020.9251496
Bespalova, K, Ross, G, Paulasto-Kröckel, M, Abhilash, T S, Karuthedath, C, Mertin, S & Pensala, T 2020, Temperature Stability of Electrode/AlScN Multilayer Systems for pMUT Process Integration . in 2020 IEEE International Ultrasonics Symposium (IUS) . IEEE Institute of Electrical and Electronic Engineers, IEEE International Ultrasonics Symposium, IEEE International Ultrasonics Symposium, IUS, Las Vegas, Nevada, United States, 7/09/20 . https://doi.org/10.1109/IUS46767.2020.9251496
openaire: EC/H2020/783132/EU//POSITION-II In this study, Al0.8Sc0.2N multilayer structures phase stability, interfacial quality, and piezoelectric response were tested before and after annealing in wide range of temperatures and times. The thicknesse
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d9c8c0a73cc8f4975d35d261d9cc3aa3
https://doi.org/10.1109/ius46767.2020.9251496
https://doi.org/10.1109/ius46767.2020.9251496
Autor:
Marc Dubois, Gabriel Christmann, Oliver Rattunde, Stefan Mertin, Paul Muralt, Sylvain Nicolay, Bernd Heinz
Publikováno v:
Mertin, S, Heinz, B, Rattunde, O, Christmann, G, Dubois, M A, Nicolay, S & Muralt, P 2018, ' Piezoelectric and structural properties of c-axis textured aluminium scandium nitride thin films up to high scandium content ', Surface and Coatings Technology, vol. 343, pp. 2-6 . https://doi.org/10.1016/j.surfcoat.2018.01.046
Partial substitution of aluminium by scandium in the wurtzite structure of aluminium nitride (AlN) leads to a large increase of the piezoelectric response by more than a factor of 2. Therefore, aluminium scandium nitride (ASN) thin films attracted mu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5859587d6480d64aac22065ac9f76a3e
https://doi.org/10.1016/j.surfcoat.2018.01.046
https://doi.org/10.1016/j.surfcoat.2018.01.046
Autor:
Marcel A. Verheijen, Kathrin Frei, Frank Altmann, Patrick Waltereit, Stefano Leone, Theodor Fuchs, Michael Fiederle, Oliver Ambacher, Andreas Graff, Jana Ligl, Michél Simon-Najasek, Christian Manz, Mario Prescher, Lutz Kirste
Publikováno v:
Semiconductor Science and Technology, 36(3):034003. Institute of Physics
AlScN/GaN epitaxial heterostructures have raised much interest in recent years, because of the high potential of such structures for high-frequency and high-power electronic applications. Compared to conventional AlGaN/GaN heterostructures, the high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::418f06a295c5fe2d118cf4663635e6e9
https://doi.org/10.1088/1361-6641/abd924
https://doi.org/10.1088/1361-6641/abd924
Autor:
Oliver Rattunde, Gabriel Christmann, Bernd Heinz, Stefan Mertin, M.-A. Dubois, Paul Muralt, Fazel Parsapour, Cosmin S. Sandu, Clemens Nyffeler, Vladimir Pashchenko
Publikováno v:
2017 IEEE International Ultrasonics Symposium (IUS).
Aluminium scandium nitride (ASN) exhibits a largely enhanced piezoelectric response as compared to aluminium nitride (AlN), which makes it an upcoming piezoelectric material for use in next generation RF filters, sensors, actuators and energy harvest
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3ab12ab48ec3cd2cc78d4bde241ba2cd
https://doi.org/10.1109/ultsym.2017.8092187
https://doi.org/10.1109/ultsym.2017.8092187