Zobrazeno 1 - 1
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pro vyhledávání: '"Alugubelli, S. R."'
Autor:
Fu, H., Zhang, X., Fu, K., Liu, H., Alugubelli, S. R., Huang, X., Chen, H., Baranowski, I., Yang, T. -H., Xu, K., Ponce, F. A., Zhang, B., Zhao, Y.
Publikováno v:
Applied Physics Express 11 (11), 111003 (2018)
This work demonstrates the first nonpolar vertical GaN on GaN pn power diodes grown on m-plane free standing substrates by MOCVD. The SEM and HRXRD results showed the good crystal quality of the homoepitaxial nonpolar structure with low defect densit
Externí odkaz:
http://arxiv.org/abs/1806.05308
