Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Alsallom, Faisal F"'
Publikováno v:
Phys. Rev. B, 108, 085117 (2023)
We demonstrate via exact diagonalization that AA-stacked TMD homobilayers host fractional quantum anomalous Hall (FQAH) states with fractionally quantized Hall conductance at fractional fillings $n=\frac{1}{3},\, \frac{2}{3}$ and zero magnetic field.
Externí odkaz:
http://arxiv.org/abs/2304.12261
Autor:
Wang, Guoqing, Li, Changhao, Tang, Hao, Li, Boning, Madonini, Francesca, Alsallom, Faisal F, Sun, Won Kyu Calvin, Peng, Pai, Villa, Federica, Li, Ju, Cappellaro, Paola
Solid-state spin defects are attractive candidates for developing quantum sensors and simulators. The spin and charge degrees of freedom in large defect ensembles are a promising platform to explore complex many-body dynamics and the emergence of qua
Externí odkaz:
http://arxiv.org/abs/2302.12742
Autor:
Guoqing Wang, Changhao Li, Hao Tang, Boning Li, Madonini, Francesca, Alsallom, Faisal F., Won Kyu Calvin Sun, Pai Peng, Villa, Federica, Ju Li, Cappellaro, Paola
Publikováno v:
Proceedings of the National Academy of Sciences of the United States of America; 8/8/2023, Vol. 120 Issue 32, p1-7, 21p
Autor:
Wang G; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139.; Department of Nuclear Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139., Li C; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139.; Department of Nuclear Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139., Tang H; Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139., Li B; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139.; Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139., Madonini F; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139.; Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Milano 20133, Italy., Alsallom FF; Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139., Calvin Sun WK; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139., Peng P; Department of Electrical Engineering, Princeton University, Princeton, NJ 08544., Villa F; Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Milano 20133, Italy., Li J; Department of Nuclear Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139.; Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139., Cappellaro P; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139.; Department of Nuclear Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139.; Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139.
Publikováno v:
Proceedings of the National Academy of Sciences of the United States of America [Proc Natl Acad Sci U S A] 2023 Aug 08; Vol. 120 (32), pp. e2305621120. Date of Electronic Publication: 2023 Aug 01.