Effects of gamma radiation on the electrical properties of InAs/InGaAs quantum dot-based laser structures grown on GaAs and Si substrates by molecular beam epitaxy.

Autor: Huwayz, M. Al, Jameel, D. A., de Azevedo, Walter M., Felix, Jorlandio F., Saqri, N. Al, Lemine, O. M., Alrub, S. Abu, Henini, M.

Publikováno v: Physical Chemistry Chemical Physics (PCCP); 1/7/2024, Vol. 26 Issue 1, p445-454, 10p

Effects of gamma radiation on the electrical properties of InAs/InGaAs quantum dot-based laser structures grown on GaAs and Si substrates by molecular beam epitaxy.

Autor: Huwayz MA; Department of Physics, College of Sciences, Princess Nourah bint Abdulrahman University (PNU), Riyadh, 11671, Saudi Arabia.; School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK., Jameel DA; Department of General Sciences, College of Basic Education, University of Zakho, Zakho, Kurdistan Region Iraq, Iraq. dler.jameel@uoz.edu.krd., de Azevedo WM; Departamento de Química Fundamental, Universidade Federal de Pernambuco (UFPE), 50740-560, Recife/PE, Brazil., Felix JF; Institute of Physics, NFA, University of Brasília (UnB), Brasília, DF, 70910-900, Brazil., Saqri NA; Department of Physics, College of Science, Sultan Qaboos University, Box 36, Al Khoud 123, Oman., Lemine OM; Department of Physics, College of Sciences, Imam Mohammad Ibn Saud Islamic University (IMISU), Riyadh 11623, Saudi Arabia., Alrub SA; Department of Physics, College of Sciences, Imam Mohammad Ibn Saud Islamic University (IMISU), Riyadh 11623, Saudi Arabia., Henini M; School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK.

Publikováno v: Physical chemistry chemical physics : PCCP [Phys Chem Chem Phys] 2023 Dec 21; Vol. 26 (1), pp. 445-454. Date of Electronic Publication: 2023 Dec 21.