Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Alonso Millan-Mejia"'
Autor:
Limeng Zhang, Marco Gagino, Alonso Millan-Mejia, Kevin A. Williams, Victor Dolores Calzadilla
Publikováno v:
APL Photonics, Vol 9, Iss 10, Pp 106101-106101-9 (2024)
Frequency-modulated continuous-wave light detection and ranging (FMCW LiDAR) is a promising technology for long-range, high-accuracy, stray-light-immune distance and velocimetry sensing. To achieve this, a precisely chirped and highly coherent laser
Externí odkaz:
https://doaj.org/article/e3d525fe6b2047d2bcbf44ead23fb279
Autor:
Marco Gagino, Alonso Millan-Mejia, Luc Augustin, Kevin Williams, Erwin Bente, Victor Dolores-Calzadilla
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-10 (2024)
Abstract We present an integrated optical phased array (OPA) which embeds in-line optical amplifiers and phase modulators to provide beam-forming capability with gain and beam steering in the 1465–1590 nm wavelength range. We demonstrate up to 21.5
Externí odkaz:
https://doaj.org/article/3f491bfee412455b9a1d1132d2fbea43
Publikováno v:
IEEE Photonics Technology Letters, 28(15), 1637-1640. Institute of Electrical and Electronics Engineers
In this letter, we present a sharp bend design for the InP-based photonic membrane, which shows low loss and high tolerance. The traditional arc bends on InP membranes face high loss when the bending radii reduce below 2 $\mu \text{m}$ . In addition,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3a3095ee12866e4bd24e80e82cb83326
https://doi.org/10.1109/LPT.2016.2565607
https://doi.org/10.1109/LPT.2016.2565607
Autor:
Jos J. G. M. van der Tol, Jorn P. van Engelen, MK Meint Smit, Alonso Millan-Mejia, Yuqing Jiao, L. Shen, Vadim Pogoretskii
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics, 24(1):6100809. Institute of Electrical and Electronics Engineers
Integrating electronic and photonic functions has become a major issue in the last decade. This integration requires small photonic circuits that are compatible with CMOS processing. Here an approach using an indium phosphide based membrane is review
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fdec7f5512974058511cb86f02a7bc4d
https://doi.org/10.1109/jstqe.2017.2772786
https://doi.org/10.1109/jstqe.2017.2772786
Autor:
Yuqing Jiao, L. Shen, MK Meint Smit, EJ Erik Jan Geluk, Barry Smalbrugge, Alonso Millan Mejia, Josselin Pello, Jos J. G. M. van der Tol
Publikováno v:
Optics Letters, 39(6), 1645-1648. Optical Society of America (OSA)
Optics Letters
Optics Letters
In this Letter, we present a method to prepare a mixed electron-beam resist composed of a positive resist (ZEP520A) and C 60 fullerene. The addition of C 60 to the ZEP resist changes the material properties under electron beam exposure significantly.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::02257ae334c6f49d3d0084e39c66a1f3
https://doi.org/10.1364/ol.39.001645
https://doi.org/10.1364/ol.39.001645