Zobrazeno 1 - 10
of 69
pro vyhledávání: '"Alok Naugarhiya"'
Publikováno v:
Journal of Electronic Materials. 51:2576-2585
Publikováno v:
IEEE Transactions on Electron Devices. 69:1604-1607
Publikováno v:
Modern Electronics Devices and Communication Systems ISBN: 9789811963827
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44f3be504399d532ab006f320c825383
https://doi.org/10.1007/978-981-19-6383-4_20
https://doi.org/10.1007/978-981-19-6383-4_20
Publikováno v:
2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON).
Autor:
Shraddha Yogi, Alok Naugarhiya
Publikováno v:
Advances in Sustainability Science and Technology ISBN: 9789811943034
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a05d66b814d88c291b0caeee42936211
https://doi.org/10.1007/978-981-19-4304-1_26
https://doi.org/10.1007/978-981-19-4304-1_26
Publikováno v:
Microelectronics Journal. 137:105822
Publikováno v:
2022 International Conference on Intelligent Controller and Computing for Smart Power (ICICCSP).
Autor:
Vicky Butram, Alok Naugarhiya
Publikováno v:
2022 IEEE Region 10 Symposium (TENSYMP).
Autor:
Alok Naugarhiya, Vicky Butram
Publikováno v:
Arabian Journal for Science and Engineering. 47:2755-2762
Recently, energy harvesting for battery-operated sensor nodes have received a great deal of attention in boosting their lifespan. Considering green energy sources like vibration, piezoelectric vibrational energy harvesting is an effective technique t
Autor:
Alok Naugarhiya, Namrata Gupta
Publikováno v:
Journal of Computational Electronics. 20:883-891
A new heteromaterial planar-gate superjunction insulated-gate bipolar transistor (HG IGBT) is proposed herein. It consists of stepped gate oxides with thickness of 50 nm, 100 nm, and 150 nm. The gate of the proposed structure is constructed using two