Zobrazeno 1 - 10
of 585
pro vyhledávání: '"Alo Y"'
Akademický článek
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Autor:
Basnet, Pradip, Anderson, Erik, Chakrabarti, Bhaswar, West, Matthew P., Athena, Fabia Farlin, Vogel, Eric M.
Understanding the resistive switching behavior, or the resistance change, of oxide-based memristor devices, is critical to predicting their responses with known electrical inputs. Also, with the known electrical response of a memristor, one can confi
Externí odkaz:
http://arxiv.org/abs/2108.02247
Akademický článek
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Autor:
Sungjun Kim, Chih-Yang Lin, Min-Hwi Kim, Tae-Hyeon Kim, Hyungjin Kim, Ying-Chen Chen, Yao-Feng Chang, Byung-Gook Park
Publikováno v:
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-7 (2018)
Abstract This letter presents dual functions including selector and memory switching in a V/SiO x /AlO y /p++Si resistive memory device by simply controlling compliance current limit (CCL). Unidirectional threshold switching is observed after a posit
Externí odkaz:
https://doaj.org/article/29b765da25f24417a6a2a4c8125a7f08
Autor:
Biswas, S.1, Paul, A. D.1, Das, P.1, Tiwary, P.1, Edwards, H. J.2, Dhanak, V. R.2, Mitrovic, I. Z.3, Mahapatra, R.1 rajat.mahapatra@ece.nitdgp.ac.in
Publikováno v:
IEEE Transactions on Electron Devices. Aug2021, Vol. 68 Issue 8, p3787-3793. 7p.
Akademický článek
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Autor:
Wang C; School of Optical and Electronic Information and School of Integrated Circuits and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China., Mao GQ; School of Optical and Electronic Information and School of Integrated Circuits and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China., Huang M; School of Optical and Electronic Information and School of Integrated Circuits and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China., Huang E; School of Optical and Electronic Information and School of Integrated Circuits and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China., Zhang Z; School of Optical and Electronic Information and School of Integrated Circuits and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China., Yuan J; School of Optical and Electronic Information and School of Integrated Circuits and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China., Cheng W; School of Optical and Electronic Information and School of Integrated Circuits and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China.; Hubei Yangtze Memory Laboratories, Wuhan, 430205, P. R. China., Xue KH; School of Optical and Electronic Information and School of Integrated Circuits and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China.; Hubei Yangtze Memory Laboratories, Wuhan, 430205, P. R. China., Wang X; School of Optical and Electronic Information and School of Integrated Circuits and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China.; Hubei Yangtze Memory Laboratories, Wuhan, 430205, P. R. China., Miao X; School of Optical and Electronic Information and School of Integrated Circuits and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China.; Hubei Yangtze Memory Laboratories, Wuhan, 430205, P. R. China.
Publikováno v:
Advanced science (Weinheim, Baden-Wurttemberg, Germany) [Adv Sci (Weinh)] 2022 Jul; Vol. 9 (21), pp. e2201446. Date of Electronic Publication: 2022 May 29.
Autor:
Hoppe A; Institute of Chemical Technology, Universität Leipzig, 04109 Leipzig, Germany., Dirksen C; Fraunhofer Institute for Ceramic Technologies and Systems IKTS, Michael-Faraday-Str. 1, 07629 Hermsdorf, Germany., Skadell K; Fraunhofer Institute for Ceramic Technologies and Systems IKTS, Michael-Faraday-Str. 1, 07629 Hermsdorf, Germany., Stelter M; Fraunhofer Institute for Ceramic Technologies and Systems IKTS, Michael-Faraday-Str. 1, 07629 Hermsdorf, Germany., Schulz M; Fraunhofer Institute for Ceramic Technologies and Systems IKTS, Michael-Faraday-Str. 1, 07629 Hermsdorf, Germany., Carstens S; Institute of Chemical Technology, Universität Leipzig, 04109 Leipzig, Germany., Enke D; Institute of Chemical Technology, Universität Leipzig, 04109 Leipzig, Germany., Koppka S; Institute of Chemical Technology, Universität Leipzig, 04109 Leipzig, Germany.
Publikováno v:
Materials (Basel, Switzerland) [Materials (Basel)] 2021 Feb 10; Vol. 14 (4). Date of Electronic Publication: 2021 Feb 10.
Autor:
Yujian Zhang, Kailiang Zhang, Xuanyu Zhao, Zheng Sun, Qiaozhen Zhou, Xin Shan, Xin Lin, Kunming Liu, Zexia Ma, Ke Shan, Fang Wang
Publikováno v:
physica status solidi (RRL) – Rapid Research Letters. 16:2200199
Autor:
Chengxu Wang, Ge‐Qi Mao, Menghua Huang, Enming Huang, Zichong Zhang, Junhui Yuan, Weiming Cheng, Kan‐Hao Xue, Xingsheng Wang, Xiangshui Miao
Publikováno v:
Advanced Science. 9:2270131