Improvement of highly-doped regions from laser processed dielectric films

Autor: Almirall Canudas, Xavier

Publikováno v: UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
Recercat. Dipósit de la Recerca de Catalunya
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This TFG is focused on the development of high quality n+ and p+ regions based on laser processed dielectric films. The involved films consist of a thin intrinsic amorphous silicon layer (a-Si:H(i)) capped with a doped (phosphorus for n+ and boron fo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::55cd8dfe9125f131053145c02d10ab89
http://hdl.handle.net/2117/105639