Zobrazeno 1 - 10
of 78
pro vyhledávání: '"Alloatti, Luca"'
Autor:
Alloatti, Luca, Ram, Rajeev Jagga
Publikováno v:
AIP Advances 6, 85219 (2016)
We report on vertically-illuminated photodiodes fabricated in the GlobalFoundries 45nm 12SOI node and on a packaging concept for optically-interconnected chips. The photodiodes are responsive at 1180 nm, a wavelength currently used in chip-to-chip co
Externí odkaz:
http://arxiv.org/abs/1606.08870
Publikováno v:
Appl. Phys. Lett. 108, 131101 (2016)
A microring depletion modulator is demonstrated with T-shaped lateral p-n junctions used to realize efficient modulation while maximizing the RC limited bandwidth. The device having a 3 dB bandwidth of 13 GHz has been fabricated in a standard 45 nm m
Externí odkaz:
http://arxiv.org/abs/1601.05046
Autor:
Alloatti, Luca, Ram, Rajeev Jagga
Publikováno v:
Appl. Phys. Lett. 108, 071105 (2016)
A photodiode with 0.55$\pm$0.1 A/W responsivity at a wavelength of 1176.9 nm has been fabricated in a 45 nm microelectronics silicon-on-insulator foundry process. The resonant waveguide photodetector exploits carrier generation in silicon-germanium (
Externí odkaz:
http://arxiv.org/abs/1601.00542
Publikováno v:
Appl. Phys. Lett. 107, 031107 (2015)
We show that undoped silicon waveguides may suffer of up to 1.8 dB/cm free-carrier absorption caused by improper surface passivation. To verify the effects of free-carriers we apply a gate field to the waveguides. Smallest losses correspond to higher
Externí odkaz:
http://arxiv.org/abs/1504.07613
Publikováno v:
IET Optoelectronics, 9(4), 163 (2015)
Recently, the authors have demonstrated large-scale integrated systems with several million transistors and hundreds of photonic elements. Yielding such large-scale integrated systems requires a design-for-manufacture rigour that is embodied in the 1
Externí odkaz:
http://arxiv.org/abs/1504.03669
Autor:
Alloatti, Luca, Kieninger, Clemens, Froelich, Andreas, Lauermann, Matthias, Frenzel, Tobias, Koehnle, Kira, Freude, Wolfgang, Leuthold, Juerg, Wegener, Martin, Koos, Christian
Publikováno v:
Appl. Phys. Lett. 107, 121903 (2015)
Structuring optical materials on a nanometer scale can lead to artificial effective media, or metamaterials, with strongly altered optical behavior. Metamaterials can provide a wide range of linear optical properties such as negative refractive index
Externí odkaz:
http://arxiv.org/abs/1504.00101
Autor:
Eppenberger, Marco, Bonomi, Mattia, Moor, David, Mueller, Marco, Bitachon, Bertold Ian, Burger, Thomas, Alloatti, Luca
Publikováno v:
Journal of Lightwave Technology, 39 (21)
As the reach of optical communications continues to shrink, photonics is moving from rack-to-rack datacom links to centimeter-scale in-computer applications (computercom) where different architectures are needed. Integrated optical microring resonato
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7341a38c047cf18b5314c8b019cfe0d0
https://hdl.handle.net/20.500.11850/509590
https://hdl.handle.net/20.500.11850/509590
Akademický článek
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Autor:
Eppenberger, Marco, Bonomi, Mattia, Moor, David, Mueller, Marco, Bitachon, Bertold Ian, Burger, Thomas, Alloatti, Luca
Publikováno v:
OSA Technical Digest
Optical Fiber Communication Conference (OFC) 2021
Optical Fiber Communication Conference (OFC) 2021
We demonstrate a digital-to-optical-to-digital link operating at 10 Gb/s with 2.4 pJ/b below 10-9 BER enabled by zero-change CMOS macros. All necessary electronic-photonic circuits are contained within 0.015 mm2 of silicon area.
OSA Technical Di
OSA Technical Di
Autor:
Korn, Dietmar, Lauermann, Matthias, Koeber, Sebastian, Appel, Patrick, Alloatti, Luca, Palmer, Robert, Dumon, Pieter, Freude, Wolfgang, Leuthold, Juerg, Koos, Christian
Publikováno v:
Nature Communications, Vol 7, Iss 1, Pp 1-9 (2016)
Nature Communications
Nature Communications
Silicon photonics enables large-scale photonic–electronic integration by leveraging highly developed fabrication processes from the microelectronics industry. However, while a rich portfolio of devices has already been demonstrated on the silicon p