Zobrazeno 1 - 10
of 245
pro vyhledávání: '"Allerman, Andrew"'
Autor:
Zhu, Yinxuan, Allerman, Andrew A., Joishi, Chandan, Pratt, Jonathan, Xavier, Agnes Maneesha Dominic Merwin, Ortiz, Gabriel Calderon, Klein, Brianna A., Armstrong, Andrew, Hwang, Jinwoo, Rajan, Siddharth
We report on the heterostructure and interfacial engineering of metalorganic chemical vapor deposition (MOCVD) grown reverse-graded contacts to ultra-wide bandgap AlGaN. A record low contact resistivity of 1.4 x 10-6 Ohm.cm2 was reported on an Al0.82
Externí odkaz:
http://arxiv.org/abs/2411.10566
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Binder, Andrew T., Cooper, James A., Steinfeldt, Jeffrey, Allerman, Andrew A., Floyd, Richard, Yates, Luke, Kaplar, Robert J.
Publikováno v:
In e-Prime - Advances in Electrical Engineering, Electronics and Energy September 2023 5
Publikováno v:
Appl. Phys. Lett. 114, 011903 (2019)
We report a theoretical study of the structural, electronic and optical properties of hBN-AlN superlattice heterostructures (SL) using a first-principles approach based on standard and hybrid Density Functional Theory. We consider short-period ($L<10
Externí odkaz:
http://arxiv.org/abs/1812.07188
Autor:
Zhang, Yuewei, Krishnamoorthy, Sriram, Akyol, Fatih, Johnson, Jared M., Allerman, Andrew A., Moseley, Michael W., Armstrong, Andrew M., Hwang, Jinwoo, Rajan, Siddharth
In this work, we investigate the use of nanoscale polarization engineering to achieve efficient hole injection from metals to ultra-wide band gap AlGaN, and we show that UV-reflective aluminum (Al) layers can be used for hole injection into p-AlGaN.
Externí odkaz:
http://arxiv.org/abs/1705.08414
Autor:
Zhang, Yuewei, Krishnamoorthy, Sriram, Akyol, Fatih, Bajaj, Sanyam, Allerman, Andrew A., Moseley, Michael W., Armstrong, Andrew M., Rajan, Siddharth
We report on tunnel-injected deep ultraviolet light emitting diodes (UV LEDs) configured with a polarization engineered Al0.75Ga0.25N/ In0.2Ga0.8N tunnel junction structure. Tunnel-injected UV LED structure enables n-type contacts for both bottom and
Externí odkaz:
http://arxiv.org/abs/1703.00117
Autor:
Fu, Houqiang, Fu, Kai, Yang, Chen, Liu, Hanxiao, Hatch, Kevin A., Peri, Prudhvi, Herath Mudiyanselage, Dinusha, Li, Bingjun, Kim, Tae-Hyeon, Alugubelli, Shanthan R., Su, Po-Yi, Messina, Daniel C., Deng, Xuguang, Cheng, Chi-Yin, Vatan Meidanshahi, Reza, Huang, Xuanqi, Chen, Hong, Yang, Tsung-Han, Zhou, Jingan, Armstrong, Andrew M., Allerman, Andrew A., Yu, Edward T., Han, Jung, Goodnick, Stephen M., Smith, David J., Nemanich, Robert J., Ponce, Fernando A., Zhao, Yuji
Publikováno v:
In Materials Today October 2021 49:296-323
Autor:
Zhang, Yuewei, Krishnamoorthy, Sriram, Akyol, Fatih, Allerman, Andrew A., Moseley, Michael W., Armstrong, Andrew M., Rajan, Siddharth
Ultra violet light emitting diodes (UV LEDs) face critical limitations in both the injection efficiency and light extraction efficiency due to the resistive and absorbing p-type contact layers. In this work, we investigate the design and application
Externí odkaz:
http://arxiv.org/abs/1608.08653
Autor:
Zhang, Yuewei, Krishnamoorthy, Sriram, Akyol, Fatih, Allerman, Andrew A., Moseley, Michael W., Armstrong, Andrew M., Rajan, Siddharth
We discuss the engineering of p-AlGaN cladding layers for achieving efficient tunnel-injected III-Nitride ultraviolet light emitting diodes (UV LEDs) in the UV-A spectral range. We show that capacitance-voltage measurements can be used to estimate th
Externí odkaz:
http://arxiv.org/abs/1609.06240
Autor:
Zhang, Yuewei, Allerman, Andrew, Krishnamoorthy, Sriram, Akyol, Fatih, Moseley, Michael W., Armstrong, Andrew, Rajan, Siddharth
The efficiency of ultra violet LEDs is critically limited by the absorption losses in p-type and metal layers. In this work, surface roughening based light extraction structures are combined with tunneling-based top-contacts to realize highly efficie
Externí odkaz:
http://arxiv.org/abs/1512.02260