Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Allen Dai"'
Publikováno v:
International Journal of Chronic Obstructive Pulmonary Disease
Christian Ghattas,1 Allen Dai,2 David J Gemmel,3 Magdi H Awad2 1Department of Internal Medicine, St Elizabeth Health Center, Youngstown, OH, USA; 2Northeast Ohio Medical University College of Pharmacy, Rootstown, OH, USA; 3Department of Medical Educa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0d893ab45b000d2aa23aa5d3e054fb63
https://pubmed.ncbi.nlm.nih.gov/24348030
https://pubmed.ncbi.nlm.nih.gov/24348030
Autor:
Ding-Jang Lin, Yuan-Shan Tsai, Wei-Chuan Chang, Allen Dai, Ming-Yi Lee, An-Shun Teng, Chih-Yuan Lu, Chih-Jen Hsiao, Yi-Yueh Chen, Ta-Wei Lee
Publikováno v:
Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
For the first time, we have demonstrated the reliability degradation of gate dielectric due to contamination of chromium in the silicon substrate. Before semiconductor processing, it is difficult to detect the chromium in bare wafer because the Cr-io
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f99259483979bd4b7c3d2dbc59b4922b
https://doi.org/10.1109/ipfa.2013.6599127
https://doi.org/10.1109/ipfa.2013.6599127
Reliability investigations of down-stream copper interconnect with different Tungsten-VIA structures
Autor:
Ronnie Tu, Bernie Han, Shih-Chin Lee, Thomas Wen, Ming-Yi Lee, An-Shun Teng, Robyn Chen, Chih-Yuan Lu, Allen Dai, Albert Kuo
Publikováno v:
2012 IEEE International Integrated Reliability Workshop Final Report.
The reliability assessments of tungsten via to copper interconnect were investigated. Three layout schemes of full-landing, just-landing and un-landing via structure showed similar characteristics of electromigration: The activation energy is about 0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fd29daa232494a05f5bf38f0dadbbe5
https://doi.org/10.1109/iirw.2012.6468915
https://doi.org/10.1109/iirw.2012.6468915
Autor:
X.C. Lee, An-Shun Teng, Thomas Wen, Ming-Yi Lee, Allen Dai, Albert Kuo, Chih-Yuan Lu, Ronnie Tu
Publikováno v:
2012 IEEE International Interconnect Technology Conference.
The reliability assessment of tungsten via to copper interconnect were investigated. Just-landing and un-landing via structure showed similar EM characteristics to full-landing structure. The activation energy of EM is about 0.86 and current density
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3eaa462f11f84c79acf691efeaa76417
https://doi.org/10.1109/iitc.2012.6251650
https://doi.org/10.1109/iitc.2012.6251650