Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Allen Bian"'
Publikováno v:
ECS Transactions. 34:743-748
Shallow Trench Isolation(STI) is widely used in advanced CMOS technologies. This paper describes a shallow trench isolation for 0.13μm CMOS technologies development which utilizes AMAT Ultima Plus High Density Plasma (HDP) CVD oxide process to fill
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::982a57562833474645aad8d79a8dd246
https://doi.org/10.1149/1.3567667
https://doi.org/10.1149/1.3567667
Publikováno v:
ECS Transactions. 34:787-792
The influence of the SiN cap-layer deposition process including different pre-clean treatments on the voltage breakdown (VBD) and electromigration (EM) behavior of copper dual damascene metallization has been studied. A remarkable improvement for vol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::248b90cc2f3edede701f3196c6be66fc
https://doi.org/10.1149/1.3567674
https://doi.org/10.1149/1.3567674
Publikováno v:
ECS Transactions. 18:601-604
In advance Cu BEOL process, Encore Ta/TaN deposition process is widely used for barrier layer deposition to achieve lower via resistance and better electro migration and stress migration performance. However, wafer micro arcing existed frequently due
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::159c81b37f84a5d898d17e95ffc687c9
https://doi.org/10.1149/1.3096508
https://doi.org/10.1149/1.3096508