Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Allan C. Tuan"'
Publikováno v:
Thin Solid Films. :766-771
A novel deposition sequence has been developed for the growth of carbon-free, amorphous titanium dioxide thin films on p-type Si(100) using titanium tetrakis–isopropoxide (TTIP) as the metalorganic precursor. The deposition process occurs in an ult
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2acdd2902a1d35041f8021305d8d917
https://doi.org/10.1016/s0040-6090(00)01453-x
https://doi.org/10.1016/s0040-6090(00)01453-x
Autor:
A. B. Pakhomov, Suntharampillai Thevuthasan, Kannan M. Krishnan, Vaithiyalingam Shutthanandan, B. K. Roberts, David E. McCready, Scott A. Chambers, Allan C. Tuan
Publikováno v:
Journal of Applied Physics. 95:7393-7395
Multilayers of Co and ZnO, with nominal layer thicknesses on the atomic scale with up to 25 bilayers, were deposited by ion beam sputtering on silicon and glass substrates at ambient temperature. Thick epitaxial CoxZn1−xO films on Al2O3(012) substr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7b0b142438c6df1e0a28b1e88d5ba19
https://doi.org/10.1063/1.1669224
https://doi.org/10.1063/1.1669224
Publikováno v:
Applied Physics Letters. 83:3734-3736
We have used x-ray photoelectron spectroscopy with high energy resolution to determine band discontinuities at the two buried interfaces of the epitaxial TiO2 (anatase)/SrTiO3/Si(001) system. The valence band offsets are −2.1±0.1 eV and +0.2±0.1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::772680eb1768bb26d6cfe04c5ddc6b3b
https://doi.org/10.1063/1.1625113
https://doi.org/10.1063/1.1625113
Autor:
Daniel R. Gamelin, Allan C. Tuan, Dana A. Schwartz, Kevin R. Kittilstved, Steve M. Heald, Scott A. Chambers
Publikováno v:
Physical Review Letters. 97
In only a few cases have the key factors controlling long-range magnetic ordering in diluted magnetic semiconductors (DMSs) been unambiguously identified. In Ga1� xMnxAs, the identification and variation of critical experimental parameters has culm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2cf32fe989a41bd8eb46db5f9d275190
https://doi.org/10.1103/physrevlett.97.037203
https://doi.org/10.1103/physrevlett.97.037203
Autor:
Kevin R, Kittilstved, Dana A, Schwartz, Allan C, Tuan, Steve M, Heald, Scott A, Chambers, Daniel R, Gamelin
Publikováno v:
Physical review letters. 97(3)
The hypothesis that high-Curie-temperature ferromagnetism in cobalt-doped ZnO (Co2+: ZnO) is mediated by charge carriers was tested by controlled introduction and removal of the shallow donor interstitial zinc. Using oriented epitaxial Co2+: ZnO film
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::8b630000a638ea762f31c044b430bee4
https://pubmed.ncbi.nlm.nih.gov/16907540
https://pubmed.ncbi.nlm.nih.gov/16907540
Autor:
Mark H. Engelhard, Vaithiyalingam Shutthanandan, Suntharampillai Thevuthasan, Allan C. Tuan, Daniel R. Gamelin, Scott A. Chambers, Daniel J. Gaspar, A. B. Pakhomov, J. W. Rogers, John D. Bryan, Kannan M. Krishnan, David E. McCready
Publikováno v:
Physical Review B. 70
$\mathrm{Co}$-doped $\mathrm{ZnO}({\mathrm{Co}}_{x}{\mathrm{Zn}}_{1\ensuremath{-}x}\mathrm{O})$ is of potential interest for spintronics due to the prediction of room-temperature ferromagnetism. We have grown epitaxial ${\mathrm{Co}}_{x}{\mathrm{Zn}}
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::706e2fdca50f6aa94a762cd9c983b8fa
https://doi.org/10.1103/physrevb.70.054424
https://doi.org/10.1103/physrevb.70.054424
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 21:895
Oxidation of silicon with neutral atomic oxygen species generated in a rare gas plasma has recently been shown to produce high-quality thin oxides. It has been speculated that atomic oxygen in the first excited state, O(1D), is a dominant reactive sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21dd8a97c83c915e78519eb92bdface5
https://doi.org/10.1116/1.1563254
https://doi.org/10.1116/1.1563254