Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Alkioni Mantzari"'
Autor:
Irina Galben, Alkioni Mantzari, Frédéric Mercier, Maya Marinova, Efstathios K. Polychroniadis, Didier Chaussende
Publikováno v:
Physica B: Condensed Matter
Physica B: Condensed Matter, Elsevier, 2009, 404 (23-24), pp.4749-4751. ⟨10.1016/j.physb.2009.08.190⟩
Physica B: Condensed Matter, Elsevier, 2009, 404 (23-24), pp.4749-4751. ⟨10.1016/j.physb.2009.08.190⟩
International audience; A transmission electron microscopy (TEM) study on the generation of stacking faults (SFs) and stacking fault (SF) induced inclusion during 3C-SiC growth by Continuous Feed Physical Vapour Transport (CF-PVT) method on 4H-SiC su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9f4638e9a20a57e031a26d6200881c83
https://doi.org/10.1016/j.physb.2009.08.190
https://doi.org/10.1016/j.physb.2009.08.190
Autor:
Didier Chaussende, Sandrine Juillaguet, Frédéric Mercier, Maya Marinova, Gabriel Ferro, Irina Galben, Teddy Robert, Olivier Kim-Hak, Jean Camassel, Jean Lorenzzi, Georgios Zoulis, Alkioni Mantzari, Efstathios K. Polychroniadis
Publikováno v:
25th International Conference on Defects in Semiconductors
25th International Conference on Defects in Semiconductors, Jul 2009, St Petersburg (RUSSIA), France. pp.4727-4730
HAL
25th International Conference on Defects in Semiconductors, Jul 2009, St Petersburg (RUSSIA), France. pp.4727-4730
HAL
International audience; The results of transmission electron microscopy (TEM) with low-temperature photoluminescence (LTPL) and Raman studies of liquid phase grown epilayers on top of a vapor liquid solid (VLS) grown 3C-SiC buffer layer are compared.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::08beca8e4a99f19dd36f309f2ca49bfb
https://hal.archives-ouvertes.fr/hal-00543681
https://hal.archives-ouvertes.fr/hal-00543681
Autor:
Carole Balloud, Ariadne Andreadou, Didier Chaussende, Florine Conchon, Jean Camassel, Alexandre Boulle, Michel Pons, Sandrine Juillaguet, Maher Soueidan, Alkioni Mantzari, Frédéric Mercier, Efsthatios Polychroniadis, Gabriel Ferro
Publikováno v:
Journal of Crystal Growth
Journal of Crystal Growth, Elsevier, 2008, 310, pp.976-981. ⟨10.1016/j.jcrysgro.2007.11.140⟩
Journal of Crystal Growth, Elsevier, 2008, 310, pp.976-981. ⟨10.1016/j.jcrysgro.2007.11.140⟩
International audience; Despite outstanding properties, the development of 3C-SiC electronics continues to suffer from the lack of good quality, bulk 3C-SiC substrates. Up to now, there is no real seed and/or optimized growth processes. In this work,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9902269c47428cd9b6e0d28c5cbd048e
https://hal.archives-ouvertes.fr/hal-00174181/file/Article_-_EMRS2007_-_chaussende_-_symp_G_-_revised_2.pdf
https://hal.archives-ouvertes.fr/hal-00174181/file/Article_-_EMRS2007_-_chaussende_-_symp_G_-_revised_2.pdf
Autor:
Efstathios K. Polychroniadis, Alkioni Mantzari, Ariadne Andreadou, Maya Marinova, Narendraraj Chandran
Publikováno v:
International Journal of Nanotechnology. 11:539
In the present work we report on some recent results on the 3C-SiC structural nanoscaled defects, studied by Transmission Electron Microscopy. The examined samples were grown in several laboratories by different methods such as Vapour-Liquid-Solid, C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3fde4892f463f26cf53278c45e850cca
https://doi.org/10.1504/ijnt.2014.060575
https://doi.org/10.1504/ijnt.2014.060575