Zobrazeno 1 - 6
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pro vyhledávání: '"Alisha Nanwani"'
Autor:
Alisha Nanwani, Abhay D. Deshmukh
Publikováno v:
Novel Applications of Carbon Based Nano-Materials ISBN: 9781003183549
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bd9d6976cdff82b809bc7a5a46fda00
https://doi.org/10.1201/9781003183549-7
https://doi.org/10.1201/9781003183549-7
Autor:
Dilip Peshwe, Alisha Nanwani, S.J. Dhoble, Akanksha R. Urade, Kavita A. Deshmukh, Bipin Kumar Gupta, Patchaiyappan Sivaraman, Abhay D. Deshmukh
Publikováno v:
ACS Omega
ACS Omega, Vol 3, Iss 7, Pp 7204-7213 (2018)
ACS Omega, Vol 3, Iss 7, Pp 7204-7213 (2018)
The development of high volumetric or areal capacitance energy storage devices is critical for the future electronic devices. Hence, the hunting for next-generation electrode materials and their design is of current interest. The recent work in the t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2e30f25dc8e69e982b97280ac256a10b
https://doi.org/10.1021/acsomega.8b00596
https://doi.org/10.1021/acsomega.8b00596
Publikováno v:
Journal of Physics D: Applied Physics. 55:115302
The role of post-growth cyclic annealing (PGCA) and subsequent regrowth, on the improvement of crystal quality and surface morphology of (111)-oriented Ge epitaxial layers, grown by low temperature (300 °C) molecular beam epitaxy on epi-Gd2O3/Si(111
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5cde91902ac080ee25380ec8204ccc1
https://doi.org/10.1088/1361-6463/ac3f0d
https://doi.org/10.1088/1361-6463/ac3f0d
Autor:
Abhay D. Deshmukh, P. Sivaraman, Alisha Nanwani, H.C. Swart, Indu Sharma, S.J. Dhoble, Kavita A. Deshmukh, Dilip Peshwe, Bipin Kumar Gupta
Publikováno v:
npj 2D Materials and Applications, Vol 3, Iss 1, Pp 1-7 (2019)
Pseudocapacitors with nickel/cobalt hydroxide-based electrodes show promises energy storage devices, because they are economical and safe, but cycle stability and high current rate capability have not been achieved. We shed light on how magnesium in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5a090cdfd476b0c507890a074c999b07
https://doi.org/10.1038/s41699-019-0126-2
https://doi.org/10.1038/s41699-019-0126-2
Autor:
Samik Mukherjee, Oussama Moutanabbir, Jaswant S. Rathore, Alisha Nanwani, Sudipta Das, Suddhasatta Mahapatra
Publikováno v:
Journal of Physics D: Applied Physics. 54:185105
We systematically investigate the compositional uniformity, degree of strain relaxation (DSR), defect structure and surface morphology of GeSn epitaxial layers with 16% Sn, grown by low temperature molecular beam epitaxy (MBE) on Ge-buffered Si(001)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5fd7522152b5d3fd34ac95bdaacf9c8
https://doi.org/10.1088/1361-6463/abe1e8
https://doi.org/10.1088/1361-6463/abe1e8
Publikováno v:
Journal of Energy Storage. 31:101604
Doping is the most effective strategy to improve the electrochemical performance of supercapacitors. Herein, we report the doping effect of Magnesium on structural instability of Ni-Co LDHs as the supercapacitor electrode material. The morphology of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d49004c748155f17dd7fc650aa259fda
https://doi.org/10.1016/j.est.2020.101604
https://doi.org/10.1016/j.est.2020.101604