Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Alireza Parsafar"'
Autor:
Syed Rubab, James Guthrie, Jing Wang, Clifford Ting, Ruslana Shulyzki, Aynaz Vatankhahghadim, Michael De Vita, Alireza Parsafar, Junhong Zhao, Noam Dolev, Sitaraman V. Iyer, Bahram Zand, Aleksey Tyshchenko, Mike Bichan, Eric Liu, Fulvio Spagna, Shaham Sharifian, Katya Tyshchenko
Publikováno v:
CICC
This paper presents the first SerDes design to demonstrate a PCI-Express 5 link with area of 0.33mm2 per lane, die edge usage per lane of 285 um, dynamic junction temperature range from -40C to 125C, energy efficiency of 11.4pJ/bit including PLL and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c26acb0c936049f78d173528933a9ff
https://doi.org/10.1109/cicc48029.2020.9075947
https://doi.org/10.1109/cicc48029.2020.9075947
Publikováno v:
IEEE Electron Device Letters. 36:481-483
We report a monolithic direct-conversion X-ray imager capable of detecting diagnostic level X-rays. The imager is constructed by combining a custom $32 \times 32$ CMOS four-transistor active pixel sensor (4T APS) array with an amorphous selenium phot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a60593b35e59e038881d9d904fe75091
https://doi.org/10.1109/led.2015.2410304
https://doi.org/10.1109/led.2015.2410304
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM).
We demonstrate measured X-ray dose efficiency results from a 5.6-μm × 6.25-μm pixel-pitch direct-conversion amorphous selenium/CMOS hybrid X-ray imager. Compared to existing scintillator-based imagers, our approach enables up to 100x gains in DQE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5aaa58c99c27fec35830e41b2b1832c9
https://doi.org/10.1109/iedm.2015.7409803
https://doi.org/10.1109/iedm.2015.7409803
Publikováno v:
2013 IEEE International Symposium on Circuits & Systems (ISCAS2013); 2013, p1-154, 154p
Autor:
Parsafar, Alireza, Scott, Christopher C., El-Falou, Abdallah, Levine, Peter M., Karim, Karim S.
Publikováno v:
IEEE Electron Device Letters; May2015, Vol. 36 Issue 5, p481-483, 3p