Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Alireza Kashir"'
Publikováno v:
ACS Applied Electronic Materials. 3:5632-5640
Publikováno v:
ACS Applied Electronic Materials. 3:629-638
A wake-up free Hf0.5Zr0.5O2 (HZO) ferroelectric film with the highest remnant polarization (Pr) value to date was achieved through tuning of the ozone pulse duration, the annealing process, and the...
Publikováno v:
Nanoscale. 13:13631-13640
The existence of a morphotropic phase boundary (MPB) inside HfO2–ZrO2 solid solution thin films has been predicted; if it exists, it provides a new path toward an ideal silicon-compatible dielectric. Herein, we investigate the structural evolution
Publikováno v:
Small (Weinheim an der Bergstrasse, Germany). 18(23)
Hafnium oxide (HfO
Publikováno v:
Nanotechnology. 33(39)
To improve the endurance and polarization switching speed of Hf
Autor:
Alireza, Kashir, Mehrdad Ghiasabadi, Farahani, Ján, Lančok, Hyunsang, Hwang, Stanislav, Kamba
Publikováno v:
Nanotechnology. 33(15)
A large coercive field
Autor:
Manoj, Yadav, Alireza, Kashir, Seungyeol, Oh, Revannath Dnyandeo, Nikam, Hyungwoo, Kim, Hojung, Jang, Hyunsang, Hwang
Publikováno v:
Nanotechnology. 33(8)
The formation of an interfacial layer is believed to affect the ferroelectric properties in HfO
Publikováno v:
Journal of the Korean Physical Society. 74:984-988
In this paper, we briefly review the holographic dark energy model and introduce the idea that dark energy is a kind of thermal energy related to the quantum entanglement of the vacuum across a cosmic future event horizon. The holographic dark energy
Publikováno v:
Current Applied Physics. 19:207-214
Transition metal oxides show remarkably diverse quantum functional properties such as high temperature superconductivity, colossal magnetoresistance, multiferroicity, two-dimensional electron gas, and topological insulators. This diversity manifests
Publikováno v:
Nanotechnology. 32(31)
We report a high-pressure oxygen annealing (HPOA) process to improve the performance of TiN/Hf