Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Alireza Faghaninia"'
Autor:
Alex M. Ganose, Junsoo Park, Alireza Faghaninia, Rachel Woods-Robinson, Kristin A. Persson, Anubhav Jain
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-9 (2021)
It is difficult to compute the transport properties of a broad array of complex materials both accurately and inexpensively. Here, the authors develop a computationally efficient method for calculating carrier scattering rates of semiconductors, with
Externí odkaz:
https://doaj.org/article/b3e227b459b84029a89a7b83e5ac85a0
Autor:
Abhinav Prakash, Peng Xu, Alireza Faghaninia, Sudhanshu Shukla, Joel W. Ager, Cynthia S. Lo, Bharat Jalan
Publikováno v:
Nature Communications, Vol 8, Iss 1, Pp 1-9 (2017)
With impressive electronic transport properties, wide bandgap perovskite oxides are promising transparent conductors. Prakashet al. report n-type BaSnO3 films with room temperature conductivity exceeding 104 S cm−1and investigate factors limiting c
Externí odkaz:
https://doaj.org/article/926c616b48b64b9484a3c88b3a79d959
Autor:
Xuemin Shi, Cheng Sun, Zhonglin Bu, Xinyue Zhang, Yixuan Wu, Siqi Lin, Wen Li, Alireza Faghaninia, Anubhav Jain, Yanzhong Pei
Publikováno v:
Advanced Science, Vol 6, Iss 16, Pp n/a-n/a (2019)
Abstract Over the past years, thermoelectric Mg3Sb2 alloys particularly in n‐type conduction, have attracted increasing attentions for thermoelectric applications, due to the multivalley conduction band, abundance of constituents, and less toxicity
Externí odkaz:
https://doaj.org/article/410539df933543c6a35d373d6aeed0b8
Publikováno v:
Physical Review Research, Vol 3, Iss 1, p 013069 (2021)
New ideas for low-mass dark matter direct detection suggest that narrow band gap materials, such as Dirac semiconductors, are sensitive to the absorption of meV dark matter or the scattering of keV dark matter. Here we propose spin-orbit semiconducto
Externí odkaz:
https://doaj.org/article/41e5b194706142759015da504387e69f
Autor:
Kristin A. Persson, Junsoo Park, Rachel Woods-Robinson, Anubhav Jain, Alex M. Ganose, Alireza Faghaninia
Publikováno v:
Nature communications, vol 12, iss 1
Nature Communications
Nature Communications, Vol 12, Iss 1, Pp 1-9 (2021)
Nature Communications
Nature Communications, Vol 12, Iss 1, Pp 1-9 (2021)
The electronic transport behaviour of materials determines their suitability for technological applications. We develop a computationally efficient method for calculating carrier scattering rates of solid-state semiconductors and insulators from firs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9a7bae1cc4a4f440afc034ad25a4658d
https://escholarship.org/uc/item/2kb6s7fq
https://escholarship.org/uc/item/2kb6s7fq
Publikováno v:
Physical Review Research, vol 3, iss 1
New ideas for low-mass dark matter direct detection suggest that narrow band gap materials, such as Dirac semiconductors, are sensitive to the absorption of meV dark matter or the scattering of keV dark matter. Here we propose spin-orbit semiconducto
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::913ffd6ba879923fb08957bffb4f060e
https://escholarship.org/uc/item/0032f5mz
https://escholarship.org/uc/item/0032f5mz
Publikováno v:
Materials Horizons, vol 7, iss 7
Computational prediction of good thermoelectric (TE) performance in several n-type doped Zintl phases, combined with successful experimental realization, has sparked interest in discovering new n-type dopable members of this family of materials. Howe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9f16b5cbfaa349621c60189927f71dca
https://doi.org/10.26434/chemrxiv.11821497
https://doi.org/10.26434/chemrxiv.11821497
Autor:
Kristin A. Persson, Anubhav Jain, Rachel Woods-Robinson, Shyam Dwaraknath, Danny Broberg, Alireza Faghaninia
Publikováno v:
Chemistry of Materials, vol 30, iss 22
The growth of materials databases has yielded significant quantities of data to mine for new energy materials using high-throughput screening methodologies. One application of interest to energy and optoelectronics is the prediction of new high perfo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::86730ec11409c07469dfb510a1e12eb0
https://doi.org/10.1021/acs.chemmater.8b03529
https://doi.org/10.1021/acs.chemmater.8b03529
Autor:
Kyle Chard, Alexander Dunn, Anubhav Jain, Logan Ward, Maxwell Dylla, Joseph Montoya, Saurabh Bajaj, Nils E. R. Zimmermann, Alireza Faghaninia, Mark Asta, Kristin A. Persson, Jiming Chen, G. Jeffrey Snyder, Kyle Bystrom, Qi Wang, Ian Foster
Publikováno v:
Computational Materials Science. 152:60-69
As materials data sets grow in size and scope, the role of data mining and statistical learning methods to analyze these materials data sets and build predictive models is becoming more important. This manuscript introduces matminer, an open-source,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab41a0f6524b83b82ec530b13f1bf571
https://doi.org/10.1016/j.commatsci.2018.05.018
https://doi.org/10.1016/j.commatsci.2018.05.018
Autor:
Binqiang Zhou, Bo Gao, Zhiwei Chen, Juan Li, Alireza Faghaninia, Yanzhong Pei, Yixuan Wu, Siqi Lin, Xinyue Zhang, Anubhav Jain, Wen Li
Publikováno v:
Materials Today Physics. 3:127-136
SnSe as a lead-free IV–VI semiconductor, has attracted intensive attention for its potential thermoelectric applications, since it is less toxic and much cheaper than conventional PbTe and PbSe thermoelectrics. Here we focus on its sister layered c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::11e4de140a8073ad47d92b0503f8b3a8
https://doi.org/10.1016/j.mtphys.2017.10.001
https://doi.org/10.1016/j.mtphys.2017.10.001