Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Alina E. Gagaeva"'
Autor:
Artem A. Osipov, Alina E. Gagaeva, Anastasiya B. Speshilova, Ekaterina V. Endiiarova, Polina G. Bespalova, Armenak A. Osipov, Ilya A. Belyanov, Kirill S. Tyurikov, Irina A. Tyurikova, Sergey E. Alexandrov
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-19 (2023)
Abstract This work is devoted to the development of nanosphere lithography (NSL) technology, which is a low-cost and efficient method to form nanostructures for nanoelectronics, as well as optoelectronic, plasmonic and photovoltaic applications. Crea
Externí odkaz:
https://doaj.org/article/931e0d70f6f7493eaf072e183ca86ab8
Autor:
Artem A. Osipov, Gleb A. Iankevich, Anastasia B. Speshilova, Alina E. Gagaeva, Armenak A. Osipov, Yakov B. Enns, Alexey N. Kazakin, Ekaterina V. Endiiarova, Ilya A. Belyanov, Viktor I. Ivanov, Sergey E. Alexandrov
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-15 (2022)
Abstract In this work, we demonstrate the high efficiency of optical emission spectroscopy to estimate the etching profile of silicon structures in SF6/C4F8/O2 plasma. The etching profile is evaluated as a ratio of the emission intensity of the oxyge
Externí odkaz:
https://doaj.org/article/c17a47dbb61149f3919f84e4fcf4234c
Autor:
Artem A. Osipov, Nikolai A. Andrianov, Anastasia B. Speshilova, Alina E. Gagaeva, Sarah Risquez, Alexandr Vorobyev, Sergey E. Alexandrov
Publikováno v:
Plasma Chemistry and Plasma Processing. 43:697-707
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9a7e53f2c98d7f39d700eea4d629e2b
https://doi.org/10.1007/s11090-023-10318-x
https://doi.org/10.1007/s11090-023-10318-x