Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Alien Lin"'
Publikováno v:
2017 China Semiconductor Technology International Conference (CSTIC).
An effective image based method to automatically measure the profile parameters (PPs), including the critical dimensions (CDs), the full height and other structural parameters, of the integrated circuit (IC) devices in batch is proposed. In this meth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::918765f19a4ce24854d3ba2a01b7375d
https://doi.org/10.1109/cstic.2017.7919843
https://doi.org/10.1109/cstic.2017.7919843
Publikováno v:
ECS Transactions. 60:165-171
Contact patterning is one of the critical steps in a state-of-the-art lithography process. One of the main challenges for developing contact patterning process in 32/28 nm technology node is to achieve better critical dimension uniformity (CDU) and s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71c2cd10a1ee1dcd5192569bfe589e2f
https://doi.org/10.1149/06001.0165ecst
https://doi.org/10.1149/06001.0165ecst
Publikováno v:
ECS Transactions. 27:497-502
Although TARC is widely used in semiconductor photolithography processes, the understandings of TARC related defects are still far from completeness. In this paper, the root causes and corrective actions of TARC related circle defect were studied. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db160dd17b93456811d53bbe6f30fbe1
https://doi.org/10.1149/1.3360665
https://doi.org/10.1149/1.3360665