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0.1- $\mu \text{m}$ InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71–76 and 81–86 GHz: Impact of Passivation and Gate Recess

Autor: P.M. Smith, Alice Vera, J. Diaz, James J. Komiak, K. H. George Duh, Kanin Chu, K. Nichols, Louis M. Mt. Pleasant, Peide D. Ye, Philip Seekell, Lin Dong, Dong Xu, Carlton T. Creamer, Xiaoping Yang, P.C. Chao, M. Ashman

Publikováno v: IEEE Transactions on Electron Devices. 63:3076-3083

We have developed 0.1- $\mu \text{m}$ gate-length InAlN/GaN high electron-mobility transistors (HEMTs) for millimeter-wave (MMW) power applications, particularly at 71–76 and 81–86 GHz bands. The impacts of depth and width of the gate recess groo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::94402cce99893677da7600801d3a1c6e
https://doi.org/10.1109/ted.2016.2579160

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50-nm Asymmetrically Recessed Metamorphic High-Electron Mobility Transistors With Reduced Source–Drain Spacing: Performance Enhancement and Tradeoffs

Autor: Dong Xu, Xiaoping Yang, K.H.G. Duh, L. Schlesinger, R. Isaak, R. A. Carnevale, P.M. Smith, P.C. Chao, P. Seekell, Lee Mohnkern, L. Mt. Pleasant, Alice Vera, R. G. Stedman, Kanin Chu

Publikováno v: IEEE Transactions on Electron Devices. 59:128-138

Whereas gate-length reduction has served as the major driving force to enhance the performance of GaAs- and InP-based high-electron mobility transistors (HEMTs) over the past three decades, the limitation of this approach begins to emerge. In this pa

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e9e15afbb40d81766bcf6d61ec7f4150
https://doi.org/10.1109/ted.2011.2172614

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50-NM SELF-ALIGNED HIGH ELECTRON-MOBILITY TRANSISTORS ON GaAs SUBSTRATES WITH EXTREMELY HIGH EXTRINSIC TRANSCONDUCTANCE AND HIGH GAIN

Autor: P.M. Smith, P. Seekell, L. Mt. Pleasant, P.C. Chao, H. Karimy, Xiaoping Yang, R. Isaak, G. Cueva, R. A. Carnevale, L. Schlesinger, R. G. Stedman, Kanin Chu, Dong Xu, K.H.G. Duh, Alice Vera, W. Kong, B. Golja, Lee Mohnkern

Publikováno v: International Journal of High Speed Electronics and Systems. 20:393-398

We report the design, fabrication and characterization of metamorphic high electron-mobility transistors (MHEMTs) with self-aligned ohmic electrodes. In this work, asymmetrically recessed 50-nm Γ-gates have been successfully used as the shadow mask

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0e535e01a4f98357681968d6391ebb84
https://doi.org/10.1142/s0129156411006672

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Growth of device quality orientation-patterned gallium phosphide (OPGaP) by improved hydride vapour phase epitaxy

Autor: Michael Snure, Lee Mohnkern, A. C. Lin, Vladimir Tassev, Peter G. Schunemann, James S. Harris, Alice Vera, Xiaoping S. Yang

Publikováno v: CLEO: 2014.

Substantial increases in substrate temperature, super-saturation, and V/III ratio have dramatically improved vertical domain propagation during hydride vapour phase epitaxy of orientation-patterned gallium phosphide, leading to device-quality quasi-p

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1448acfdc3871f2dba5dd8583332d1f8
https://doi.org/10.1364/cleo_si.2014.stu1i.6

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Development of a low-loss, non-critically phase-matched, 1- m-pumpable ZGP analog for the mid-infrared

Autor: Vladimir Tassev, Michael Snure, Alice Vera, James S. Harris, Peter G. Schunemann, A. C. Lin, Lee Mohnkern, Xiaoping S. Yang

Publikováno v: Conference on Lasers and Electro-Optics 2012.

Here we report on recent advances in the development of orientation-patterned gallium phosphide (OP-GaP) — a low loss, non-critically phase-matched, 1-μm-pumpable binary analog of ZGP with three times the thermal conductivity for high power applic

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::15759ca2d81268f7e7e63157308c38e1
https://doi.org/10.1364/cleo_si.2012.cth1b.2

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Recent advances in all-epitaxial growth and properties of orientation-patterned gallium arsenide (OP-GaAs)

Autor: Peter G. Schunemann, Y. E. Young, Lee Mohnkern, Leonard A. Pomeranz, Alice Vera

Publikováno v: Conference on Lasers and Electro-Optics/International Quantum Electronics Conference.

We report on all-epitaxial growth of large diameter (3-inch), large aperture (≫1.5mm thick), low-loss (≪0.005cm−1) QPM GaAs. 2-µm-laser-pumped OPO performance was comparable to that of ZnGeP 2 .

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e72fec9c4c643963c65f82197cc0343e
https://doi.org/10.1364/cleo.2009.cwj5

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All-epitaxial growth of low-loss, large-aperture orientation-patterned gallium arsenide (OPGaAs)

Autor: Lee Mohnkern, Daniel C. Creeden, Peter G. Schunemann, Thomas M. Pollak, Alice Vera

Publikováno v: Frontiers in Optics 2009/Laser Science XXV/Fall 2009 OSA Optics & Photonics Technical Digest.

Improved reactor design and optimized process parameters have enabled all-epitaxial growth of large diameter (3-inch), large aperture (>1.5mm thick), and low-loss (

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::dfcf3d8469d26f38087a7362511c098a
https://doi.org/10.1364/aiom.2009.awa2

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Progress in GaAs metamorphic HEMT technology for microwave applications

Autor: Alice Vera, J. Fisher, K.H.G. Duh, P.M. Smith, Kenneth K. Chu, Robert J. Lender, L. Gunter, K. Nichols, D. Dugas, Dong Xu, L. Mt. Pleasant, David E. Meharry

Publikováno v: 25th Annual Technical Digest 2003. IEEE Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003..

This paper reviews recent progress in the development of GaAs metamorphic HEMT (MHEMT) technology for microwave applications. Commercialization has begun, while efforts to further improve performance, manufacturability and reliability continue. We al

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::69a6791019f81b1f16390cfe37e67628
https://doi.org/10.1109/gaas.2003.1252354

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