Zobrazeno 1 - 10
of 94
pro vyhledávání: '"Alice Hospodková"'
Autor:
Alice Hospodková, František Hájek, Tomáš Hubáček, Zuzana Gedeonová, Pavel Hubík, Matěj Hývl, Jiří Pangrác, Filip Dominec, Tereza Košutová
Publikováno v:
ACS Applied Materials & Interfaces. 15:19646-19652
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7656c6d940c9453ff083325da93dba6
https://doi.org/10.1021/acsami.3c00799
https://doi.org/10.1021/acsami.3c00799
Autor:
František Hájek, Vitezslav Jarý, Tomáš Hubáček, Filip Dominec, Alice Hospodková, Karla Kuldová, Jiří Oswald, Jiří Pangrác, Tomáš Vaněk, Maksym Buryi, Christophe Dujardin, Gilles Ledoux
Publikováno v:
ECS Journal of Solid State Science and Technology.
We report luminescence decay characteristics of the InGaN/GaN scintillator heterostructures doped with Zn. Unusually large shifting of luminescence band caused by Zn acceptors incorporated in InGaN is observed both in time-resolved and excitation-dep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bb3b61ce37f2d0a1fa2370e27a21cce8
https://doi.org/10.1149/2162-8777/acda62
https://doi.org/10.1149/2162-8777/acda62
Publikováno v:
IEEE Transactions on Nuclear Science. 67:974-977
A set of samples based on InGaN/GaN multiple quantum well (QW) structures with an extremely thick active region and high QW numbers was prepared on different substrates by metal organic vapor phase epitaxy. Their morphology was studied by SEM images,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2350c3c188b85d5d22a0c7c3649a582e
https://doi.org/10.1109/tns.2020.2985666
https://doi.org/10.1109/tns.2020.2985666
Autor:
Alice Hospodková, František Hájek, Tomáš Hubáček, Zuzana Gedeonová, Pavel Hubík, Jiří J. Mareš, Jiří Pangrác, Filip Dominec, Karla Kuldová, Eduard Hulicius
Publikováno v:
Journal of Crystal Growth. 605:127061
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57c70d9bd6cfa7aaff84eb8ac6e5a7ca
https://doi.org/10.1016/j.jcrysgro.2022.127061
https://doi.org/10.1016/j.jcrysgro.2022.127061
Relation between Ga Vacancies, Photoluminescence, and Growth Conditions of MOVPE-Prepared GaN Layers
Autor:
Alice Hospodková, Jakub Čížek, František Hájek, Tomáš Hubáček, Jiří Pangrác, Filip Dominec, Karla Kuldová, Jan Batysta, Maciej O. Liedke, Eric Hirschmann, Maik Butterling, Andreas Wagner
Publikováno v:
Materials; Volume 15; Issue 19; Pages: 6916
A set of GaN layers prepared by metalorganic vapor phase epitaxy under different technological conditions (growth temperature carrier gas type and Ga precursor) were investigated using variable energy positron annihilation spectroscopy (VEPAS) to fin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d30dea64cd40a76844ac160717f6a157
https://doi.org/10.3390/ma15196916
https://doi.org/10.3390/ma15196916
Autor:
Matteo Vannini, Leonida A. Gizzi, G. Toci, Vitezslav Jary, M. Nikl, Petra Koester, F. Baffigi, L. Labate, Lorenzo Fulgentini, Alice Hospodková
Publikováno v:
Journal of luminescence 208 (2019): 119–124. doi:10.1016/j.jlumin.2018.12.034
info:cnr-pdr/source/autori:Toci, Guido; Gizzi, Leonida A.; Koester, Petra; Baffigi, Federica; Fulgentini, Lorenzo; Labate, Luca; Hospodkova, Alice; Jary, Vitezslav; Nikl, Martin; Vannini, Matteo/titolo:InGaN%2FGaN multiple quantum well for superfast scintillation application: Photoluminescence measurements of the picosecond rise time and excitation density effect/doi:10.1016%2Fj.jlumin.2018.12.034/rivista:Journal of luminescence/anno:2019/pagina_da:119/pagina_a:124/intervallo_pagine:119–124/volume:208
info:cnr-pdr/source/autori:Toci, Guido; Gizzi, Leonida A.; Koester, Petra; Baffigi, Federica; Fulgentini, Lorenzo; Labate, Luca; Hospodkova, Alice; Jary, Vitezslav; Nikl, Martin; Vannini, Matteo/titolo:InGaN%2FGaN multiple quantum well for superfast scintillation application: Photoluminescence measurements of the picosecond rise time and excitation density effect/doi:10.1016%2Fj.jlumin.2018.12.034/rivista:Journal of luminescence/anno:2019/pagina_da:119/pagina_a:124/intervallo_pagine:119–124/volume:208
We report the study of the fast rise time and decay time in the ps time scale of the excitonic luminescence of a multiple quantum well (MQW) heterostructure of InGaN/GaN, including the excitation density effect. These structures were proposed as ultr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f31031b5a788384494123e6d4616cf30
https://doi.org/10.1016/j.jlumin.2018.12.034
https://doi.org/10.1016/j.jlumin.2018.12.034
Autor:
Gilles Ledoux, Alice Hospodková, Karla Kuldová, František Hájek, Jiri Oswald, Markéta Zíková, Tomáš Hubáček, Jiří Pangrác, Christophe Dujardin
Publikováno v:
Journal of Crystal Growth
Journal of Crystal Growth, Elsevier, 2019, 506, pp.8-13. ⟨10.1016/j.jcrysgro.2018.10.013⟩
Journal of Crystal Growth, Elsevier, 2019, 506, pp.8-13. ⟨10.1016/j.jcrysgro.2018.10.013⟩
International audience; In this work, the influence of Si doping position on the photoluminescence (PL) properties of InGaN/GaN quantum wells (QWs) is studied. A set of samples with different positions of Si doping with respect to the multi quantum w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::03701a075d19aa0b2b73a2f3d5ff6d8d
https://doi.org/10.1016/j.jcrysgro.2018.10.013
https://doi.org/10.1016/j.jcrysgro.2018.10.013
Autor:
Eduard HULICIUS, František HÁJEK, Alice HOSPODKOVÁ, Pavel HUBÍK, Zuzana GEDEONOVÁ, Tomáš HUBÁČEK, Jiří PANGRÁC, Karla KULDOVÁ
Publikováno v:
NANOCON 2021 Conference Proeedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2289ad3e8a9a8ee1e5aa74aecfa1103
https://doi.org/10.37904/nanocon.2021.4309
https://doi.org/10.37904/nanocon.2021.4309
Autor:
Alice Hospodková, Jiří Pangrác, Markéta Zíková, Tomáš Hubáček, František Hájek, F. Dominec, Karla Kuldová, Aliaksei Vetushka, Stanislav Hasenöhrl
Publikováno v:
Lithuanian Journal of Physics. 59
In this work the mechanism which helps to reduce the dislocation density by deposition of a SiNx interlayer is discussed. It is shown that the dislocation reduction by SiNx interlayer deposition is influenced by dislocation density in the underlying
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af7b138c4c12dbeb1e9c21732cd62fa3
https://doi.org/10.3952/physics.v59i4.4134
https://doi.org/10.3952/physics.v59i4.4134
Publikováno v:
NANOCON Conference Proeedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0366347e68664d4191fd050c31025ee
https://doi.org/10.37904/nanocon.2020.3680
https://doi.org/10.37904/nanocon.2020.3680