Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Alice Boussagol"'
Publikováno v:
ECS Transactions. 16:349-360
The wafer bonding has been established as a key process used for the fabrication of silicon-on-insulator (SOI) substrates. In the present paper an overview of the fundamental aspects involved in the wafer bonding process is presented. The mechanisms
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7dbdd33ec3fff5c3be4d2f35d10f19fd
https://doi.org/10.1149/1.2982887
https://doi.org/10.1149/1.2982887
Autor:
Cécile Berne, Kira Tsyganenko, Fabrice Letertre, Olivier Rayssac, Frederic Allibert, Konstantin Bourdelle, Xavier Hebras, Christophe Figuet, Alice Boussagol, Audrey Lambert, Frank Fournel, Carlos Mazure
Publikováno v:
ECS Transactions. 3:409-415
Introduction of hybrid orientation substrates has led to the development of CMOS technologies in which NMOS transistors are fabricated on (100) Si and PMOS on (110) Si. This maximizes the crystal orientation dependent mobilities of electrons and hole
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffdc3bdc86a7b267b383361f083543d5
https://doi.org/10.1149/1.2355775
https://doi.org/10.1149/1.2355775
Publikováno v:
ECS Transactions. 3:399-410
In this paper we highlight the complementarities of process-induced stress and wafer level stress (sSOI). We first present a state of the art of the various strain engineering techniques used in production for both PMOS and NMOS devices and discuss t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fa7aa3a76dd5821f9dc813a9a4693db
https://doi.org/10.1149/1.2355837
https://doi.org/10.1149/1.2355837
Autor:
N. Kernevez, Frédéric Mazen, Laurent Clavelier, Chrystel Deguet, Jean-Michel Hartmann, Denis Rouchon, Frederic Allibert, Fabrice Letertre, Takeshi Akatsu, L. Sanchez, Thomas Signamarcheix, C. Richtarch, Virginie Loup, Carlos Mazure, Alice Boussagol, Yves Campidelli
Publikováno v:
Materials Science in Semiconductor Processing. 9:444-448
Germanium-on-insulator (GeOI), which combines high mobility of charge carriers with the advantages of an SOI structure, is an attractive integration platform for the future IC technology. Also, due to its low lattice mismatch with GaAs, III–V compo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05ea5c0bbd701839ba465c060424786b
https://doi.org/10.1016/j.mssp.2006.08.077
https://doi.org/10.1016/j.mssp.2006.08.077
Autor:
Phuong Nguyen, K. K. Bourdelle, N. Rochat, Lionel Portigliatti, Alice Boussagol, Thibaut Maurice, Aurélie Tauzin, Nicolas Sousbie, Fabrice Letertre, X. Hebras
Publikováno v:
Journal of Applied Physics. 101:033506
In this paper we study the effect of the order and dose of H and He sequential implantation on H interaction with Si lattice defects. We use systematic infrared absorption measurements to investigate the evolution of hydrogenated point defects comple
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::def93c0c63fbd5a30d2b113ff74b250f
https://doi.org/10.1063/1.2432380
https://doi.org/10.1063/1.2432380
Autor:
Ian Cayrefourcq, Alice Boussagol
Publikováno v:
ECS Meeting Abstracts. :1444-1444
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da1875ce9a05b589c0895be89fb3663f
https://doi.org/10.1149/ma2006-02/31/1444
https://doi.org/10.1149/ma2006-02/31/1444
Autor:
Bruce Faure, Fabrice Letertre, Hacene Larheche, Severine Bressot, Daniel Da Cruz, Alice Boussagol, Philippe Bove
Publikováno v:
ECS Meeting Abstracts. :486-486
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b92ee23822e9e081ad52a4ab885202d
https://doi.org/10.1149/ma2005-01/11/486
https://doi.org/10.1149/ma2005-01/11/486
Autor:
Phuong Nguyen, Alice Boussagol, K. K. Bourdelle, N. Ben Mohamed, Takeshi Akatsu, Ian Cayrefourcq, Eric Guiot, N. Sousbie
Publikováno v:
Journal of Applied Physics. 97:083527
We investigate the mechanism of the Si layer transfer in the Smart Cut™ technology for H and He coimplantation in the dose range of (2.5–5)×1016cm−2. Using infrared spectroscopy and cross-section transmission electron microscopy we study the m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::686f360e6ccfffed69cdc822b18ce802
https://doi.org/10.1063/1.1865318
https://doi.org/10.1063/1.1865318