Zobrazeno 1 - 10
of 75
pro vyhledávání: '"Alica Rosová"'
Autor:
Ján Kuzmík, Ondrej Pohorelec, Stanislav Hasenöhrl, Michal Blaho, Roman Stoklas, Edmund Dobročka, Alica Rosová, Michal Kučera, Filip Gucmann, Dagmar Gregušová, Marian Precner, Andrej Vincze
Publikováno v:
Materials, Vol 16, Iss 6, p 2250 (2023)
Metal organic chemical vapor deposition was used to grow N-polar In0.63Al0.37N on sapphire substrates. P-doping was provided by a precursor flow of Cp2Mg between 0 and 130 nmol/min, reaching a Cp2Mg/III ratio of 8.3 × 10−3. The grain structure of
Externí odkaz:
https://doaj.org/article/85422b94d57f4b2aabbaa657ee3628b4
Autor:
Edmund Dobročka, Filip Gucmann, Kristína Hušeková, Peter Nádaždy, Fedor Hrubišák, Fridrich Egyenes, Alica Rosová, Miroslav Mikolášek, Milan Ťapajna
Publikováno v:
Materials, Vol 16, Iss 1, p 20 (2022)
We report on crystal structure and thermal stability of epitaxial ε/κ-Ga2O3 thin films grown by liquid-injection metal–organic chemical vapor deposition (LI-MOCVD). Si-doped Ga2O3 films with a thickness of 120 nm and root mean square surface roug
Externí odkaz:
https://doaj.org/article/e5f936cc37314fd888339a03ebf4802b
Autor:
Alica Rosová, Edmund Dobročka, Peter Eliáš, Stanislav Hasenöhrl, Michal Kučera, Filip Gucmann, Ján Kuzmík
Publikováno v:
Nanomaterials, Vol 12, Iss 19, p 3496 (2022)
In(Ga)N epitaxial layers were grown on on-axis and off-axis (0001) sapphire substrates with an about 1100 nm-thick GaN buffer layer stack using organometallic chemical vapor deposition at 600 °C. The In(Ga)N layers consisted of a thin (~10–25 nm)
Externí odkaz:
https://doaj.org/article/522bd0a21e9443d79040cf58c03ce23f
Autor:
Ťapajna, Edmund Dobročka, Filip Gucmann, Kristína Hušeková, Peter Nádaždy, Fedor Hrubišák, Fridrich Egyenes, Alica Rosová, Miroslav Mikolášek, Milan
Publikováno v:
Materials; Volume 16; Issue 1; Pages: 20
We report on crystal structure and thermal stability of epitaxial ε/κ-Ga2O3 thin films grown by liquid-injection metal–organic chemical vapor deposition (LI-MOCVD). Si-doped Ga2O3 films with a thickness of 120 nm and root mean square surface roug
Autor:
Stanislav Hasenöhrl, Michal Blaho, Edmund Dobročka, Filip Gucmann, Michal Kučera, Peter Nádaždy, Roman Stoklas, Alica Rosová, Ján Kuzmík
Publikováno v:
Materials Science in Semiconductor Processing. 156:107290
Autor:
Filip Gucmann, Peter Nádaždy, Kristína Hušeková, Edmund Dobročka, Juraj Priesol, Fridrich Egyenes, Alexander Šatka, Alica Rosová, Milan Ťapajna
Publikováno v:
Materials Science in Semiconductor Processing. 156:107289
Autor:
I. Zaytseva, Stefan Chromik, Shira Yochelis, Alica Rosová, Yossi Paltiel, Yizhak Yacoby, Vladimír Štrbík, M. Periyasamy, M. Talacko, J. Tannous, Grzegorz Jung, Hen Alpern, Oded Millo
Publikováno v:
Journal of Superconductivity and Novel Magnetism. 33:1941-1948
The transition temperature, TC, of two types of optimally doped cuprate high-TC superconductor films, YBa2Cu3O7-δ and La1.85Sr0.15CuO4, is found to increase upon linking Au nanoparticles to their surface via organic molecules. At the same time, and
Autor:
F. Gucmann, Ľubomír Vančo, Jan Kuzmik, Prerna Chauhan, D. Machajdík, Alica Rosová, Igor Maťko, Martin Kuball, Edmund Dobročka, Peter Siffalovic, Jaroslav Kováč, Stanislav Hasenöhrl
Publikováno v:
CrystEngComm. 22:130-141
Thick InAlN layers (In-molar fraction >0.37) on GaN buffer layers were prepared using a close-coupled showerhead metalorganic chemical vapor deposition (MOCVD) reactor. This work provides a discussion of the dependence of reactor parameters (pressure
Publikováno v:
Physica C: Superconductivity and its Applications. 560:40-44
No barrier MgB2/SS composite wire was fabricated by the powder-in-tube (PIT) and by the internal magnesium diffusion (IMD) into boron process. Mechanically strong SS sheath keeps the high density of boron powder during could wire drawing, which allow
Autor:
Ahmed Mohamed Hassan Ibrahim, Martin Balog, Peter Švec, L Kopera, M Kulich, Pavol Kováč, Alica Rosová, Lubomir Orovcik, Peter Krizik, I Hušek, Bronislava Szundiova
Publikováno v:
Materials & Design, Vol 157, Iss, Pp 12-23 (2018)
An aluminum material stabilized with a 1.6 vol% of nanometric Al2O3 dispersoids, named HITEMAL, was fabricated by hot extrusion of a fine atomized Al powder. The Al2O3 dispersoids stemmed from a native Al2O3 films on an aluminum powder surface. An ex