Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Aliasghar Ayobi"'
Autor:
Aliasghar Ayobi
Publikováno v:
Journal of Optoelectronical Nanostructures, Vol 9, Iss 2, Pp 22-46 (2024)
Abstract In this paper the influence of different parameters such as active layer thickness, light intensity and charge separation distance on the photocurrent-voltage, short circuit current density (Jsc) and open circuit voltage (Voc) characteristic
Externí odkaz:
https://doaj.org/article/7aab12cef7474c6cac9b0fd3151f05c7
Autor:
Aliasghar Ayobi
Publikováno v:
Journal of Electronic Materials. 51:1681-1691
Publikováno v:
Transactions on Electrical and Electronic Materials. 20:240-251
In the first part of this manuscript, two OLED devices composed of Alq3:DCM–TPA organic material as doped emitting layer, have been simulated. In the first device, the reduced mobility property of this doped layer and in the second device, trapping
Autor:
Aliasghar Ayobi
Publikováno v:
Optical and Quantum Electronics. 53
In this manuscript the material parameters are extracted with an accurate and fast method which is known as Gauss–Newton method. For this purpose the current–voltage curves of organic diodes based on LEP at different layer thicknesses and differe
Publikováno v:
Journal of Materials Science: Materials in Electronics. 30:3952-3958
In the present work, the influence of the molybdenum trioxide (MoO3) /N,N–Bis(3-methylphenyl)-N,N–bis(phenyl)benzidine(TPD)-like diamine multiple quantum well (MQW) structures as a hole injection layer (HIL)/hole transport layer (HTL) on the perf
Publikováno v:
Optical and Quantum Electronics. 51
In this paper, we study the transport and recombination mechanisms of charge carriers in a single layer PLED device based on PFO as emitting layer with considering Gaussian disorder, exponential distribution of traps, Poole–Frankel type field depen