Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Ali Rıza Deniz"'
Publikováno v:
Journal of Materials Science: Materials in Electronics. 33:26954-26965
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cfe332aa2cda20709660d8eb6c035a29
https://doi.org/10.1007/s10854-022-09359-3
https://doi.org/10.1007/s10854-022-09359-3
Publikováno v:
Journal of Photochemistry and Photobiology A: Chemistry. 443:114877
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c02ea4fd74d31f7b6ac468200f02867
https://doi.org/10.1016/j.jphotochem.2023.114877
https://doi.org/10.1016/j.jphotochem.2023.114877
Autor:
Ali Rıza Deniz, Zakir Çaldıran
Publikováno v:
Journal of Materials Science: Materials in Electronics. 33:5233-5243
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac1cbd70d562c652a9a95cdfda22c13c
https://doi.org/10.1007/s10854-022-07712-0
https://doi.org/10.1007/s10854-022-07712-0
Autor:
Ali Rıza DENİZ
Publikováno v:
Volume: 11, Issue: 4 2790-2802
Journal of the Institute of Science and Technology
Journal of the Institute of Science and Technology
The subject of this study is the use of Indigo Carmine (IC) material in Schottky diode application. The p-Si crystal was chosen as the base material for diode fabrication. One surface of the p-Si metal was coated with Al metal by thermal evaporation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7ad9148e1a1d3ffb020d9e8a95890f24
https://doi.org/10.21597/jist.942302
https://doi.org/10.21597/jist.942302
Autor:
Ali Rıza Deniz
Publikováno v:
Journal of Materials Science: Materials in Electronics. 32:18886-18899
In this study, the effect of vanadium pentoxide (V2O5) material on the electrical properties of Schottky diodes was investigated. The Al metal was evaporated by thermal evaporation method on the matte surface of the p-Si crystal. The V2O5 material of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48d84f5cbd6242ee2d09c387e4a8b56a
https://doi.org/10.1007/s10854-021-06406-3
https://doi.org/10.1007/s10854-021-06406-3
Autor:
Ali Rıza Deniz
Publikováno v:
Journal of Alloys and Compounds. 888:161523
In this study, lead oxide (PbO2) was used as interface material in Schottky diode applications. The morphological properties of PbO2 were analyzed by using Scanning Electron Microscopy (SEM). The n-Si crystal was used as the base material and PbO2 ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::327f1bc446aa28a18907d09d9babe66c
https://doi.org/10.1016/j.jallcom.2021.161523
https://doi.org/10.1016/j.jallcom.2021.161523
Publikováno v:
Superlattices and Microstructures. 157:106991
In this study, morphological properties and Schottky diode application of mpg-C3N4 material were investigated. XRD, SEM and TEM analyzes of this material were performed. When the SEM image is examined, it is seen that mpg-C3N4 particles are coated on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db8921907df7dec9d3b75673f9593f6b
https://doi.org/10.1016/j.spmi.2021.106991
https://doi.org/10.1016/j.spmi.2021.106991
In this study, Crystal Violet material was used for interface layer of Schottky diode applications. Firtly, chemical cleaning process have been made for boron doped n-Si crystals. After, Al metal was coated on the one surface of crystals by thermal e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2819971031092f78246e0e1b42e50bef
https://hdl.handle.net/20.500.12427/334
https://hdl.handle.net/20.500.12427/334
Publikováno v:
Materials Science in Semiconductor Processing. 27:163-169
Au/Pd/p-GaAs Schottky diodes were fabricated by simple assembly of monodisperse Pd nanoparticles on a p-type GaAs semiconductor. Monodisperse 5-nm Pd nanoparticles were synthesized via reduction of palladium(II) acetylacetonate in oleylamine using a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a62adabea90c8429ae610502fd9039c5
https://doi.org/10.1016/j.mssp.2014.06.022
https://doi.org/10.1016/j.mssp.2014.06.022
Publikováno v:
Materials Chemistry and Physics. 143:545-551
The Au/Anthracene/ n -Si/Al MIS device was fabricated on the basis of anthracene film covalently bonded to a Si substrate. The MIS device showed Schottky behavior with barrier heights of 0.85 eV and ideality factors of 1.88 at 300 K. The barrier heig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf82bdd183b4ff24d382e738f83636c4
https://doi.org/10.1016/j.matchemphys.2013.09.030
https://doi.org/10.1016/j.matchemphys.2013.09.030