Zobrazeno 1 - 10
of 87
pro vyhledávání: '"Ali Khakifirooz"'
Autor:
Ali Khakifirooz, Nobuyuki Sugii
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 644-645 (2020)
This special section of the IEEE JOURNAL OF ELECTRON DEVICES SOCIETY is dedicated to select papers presented at the 2019 IEEE S3S Conference, which was held Oct. 14– 17, 2019 in San Jose, CA, USA. The papers were selected based on their technical m
Externí odkaz:
https://doaj.org/article/0a18ec9d40954271899895776e558cdf
Autor:
Ali Khakifirooz, Nobuyuki Sugii
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 808-809 (2019)
This special section of the IEEE Journal of Electron Devices Society is dedicated to select papers presented at the 2018 IEEE S3S Conference, which was held Oct. 15–18, 2018 in Burlingame, CA, USA. The papers were selected based their technical mer
Externí odkaz:
https://doaj.org/article/ab4d063c8a5543389c9e15e7c7b6966f
Autor:
Ali Khakifirooz, Eduardo Anaya, Sriram Balasubrahrmanyam, Geoff Bennett, Daniel Castro, John Egler, Kuangchan Fan, Rifat Ferdous, Kartik Ganapathi, Omar Guzman, Chang Wan Ha, Rezaul Haque, Vinaya Harish, Majid Jalalifar, Owen W. Jungroth, Sung-Taeg Kang, Golnaz Karbasian, Jee-Yeon Kim, Siyue Li, Aliasgar S. Madraswala, Srivijay Maddukuri, Amr Mohammed, Shanmathi Mookiah, Shashi Nagabhushan, Binh Ngo, Deep Patel, Sai Kumar Poosarla, Naveen V. Prabhu, Carlos Quiroga, Shantanu Rajwade, Ahsanur Rahman, Jalpa Shah, Rohit S. Shenoy, Ebenezer Tachie Menson, Archana Tankasala, Sandeep Krishna Thirumala, Sagar Upadhyay, Krishnasree Upadhyayula, Ashley Velasco, Nanda Kishore Babu Vemula, Bhaskar Venkataramaiah, Jiantao Zhou, Bharat M. Pathak, Pranav Kalavade
Publikováno v:
2023 IEEE International Solid- State Circuits Conference (ISSCC).
Autor:
Rezaul Haque, Aliasgar S. Madraswala, Cindy Sun, Bharat M. Pathak, Jacqueline Snyder, Kristopher H. Gaewsky, Ali Khakifirooz, Binh Ngo, Chang Wan Ha, Prabhu Naveen Vittal, Karthikeyan Ramamurthi, Fastow Richard, Shantanu R. Rajwade, Owen W. Jungroth, Deepak Thimmegowda, Pranav Kalavade, Rohit S. Shenoy, Steven Law, Sriram Balasubrahmanyam
Publikováno v:
ISSCC
Continued improvement in the 3D NAND bit density is essential to satisfy the exponentially growing demand for data storage. The transition from 3b/cell (TLC) to 4b/cell (QLC) is a significant step towards delivering higher bit density. The increased
Autor:
Nobuyuki Sugii, Ali Khakifirooz
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 644-645 (2020)
This special section of the IEEE JOURNAL OF ELECTRON DEVICES SOCIETY is dedicated to select papers presented at the 2019 IEEE S3S Conference, which was held Oct. 14– 17, 2019 in San Jose, CA, USA. The papers were selected based on their technical m
Autor:
Nobuyuki Sugii, Ali Khakifirooz
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 808-809 (2019)
This special section of the IEEE Journal of Electron Devices Society is dedicated to select papers presented at the 2018 IEEE S3S Conference, which was held Oct. 15–18, 2018 in Burlingame, CA, USA. The papers were selected based their technical mer
Publikováno v:
Micro-and Nanoelectronics
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98f01d0d920d760ff919eea6ae4ceb74
https://doi.org/10.1201/b17597-4
https://doi.org/10.1201/b17597-4
Autor:
Bhagawan Sahu, Pranita Kerber, Terence B. Hook, Philip J. Oldiges, Andreas Scholze, Pierre Morin, K. Rim, Bruce B. Doris, Ali Khakifirooz, Pouya Hashemi, Darsen D. Lu, Bomsoo Kim
Publikováno v:
ECS Transactions. 64:337-345
We introduce SiGe FinFET device physics, process integration, and modeling considerations. Germanium is know to have a higher hole mobility than silicon. Enhancement of hole velocity due to lattice mismatch strain in SiGe epitaxy layers is significan
Publikováno v:
MRS Bulletin. 39:131-137
This article describes various techniques for applying strain to current and future complementary metal–oxide–semiconductor (CMOS) channels to boost CMOS performance. A brief history of both biaxial and uniaxial strain engineering in planar CMOS
Autor:
Nobuyuki Sugii, Ali Khakifirooz
Publikováno v:
IEEE Journal of the Electron Devices Society. 6:540-541
This special section of the IEEE Journal of Electron Devices Society is dedicated to select papers presented at the 2017 IEEE S3S Conference, which was held Oct. 16 – 19, 2017 in Burlingame, CA, USA. The papers were selected based on their technica