Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Ali K, Okyay"'
Autor:
Saidjafarzoda Ilhom, Adnan Mohammad, John Grasso, Brian G. Willis, Ali K. Okyay, Necmi Biyikli
Publikováno v:
ACS Applied Electronic Materials. 5:335-343
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5666d3a695b2b280d8d807753ae55275
https://doi.org/10.1021/acsaelm.2c01353
https://doi.org/10.1021/acsaelm.2c01353
Publikováno v:
ACS Omega, Vol 2, Iss 11, Pp 8319-8329 (2017)
Externí odkaz:
https://doaj.org/article/8e6dc83bebe04b5b90c79d6c3a22ec52
Publikováno v:
AIP Advances, Vol 4, Iss 7, Pp 077106-077106-7 (2014)
Noble metals such as gold and silver have been extensively used for plasmonic applications due to their ability to support plasmons, yet they suffer from high intrinsic losses. Alternative plasmonic materials that offer low loss and tunability are de
Externí odkaz:
https://doaj.org/article/411ab0bba94344428d951e4ea1eb8bd5
Publikováno v:
AIP Advances, Vol 3, Iss 11, Pp 112116-112116-6 (2013)
A functional zinc-oxide based SONOS memory cell with ultra-thin chromium oxide trapping layer was fabricated. A 5 nm CrO2 layer is deposited between Atomic Layer Deposition (ALD) steps. A threshold voltage (Vt) shift of 2.6V was achieved with a 10V p
Externí odkaz:
https://doaj.org/article/63c59f33fd3744358d2b09d334e5f70b
Autor:
Nazek El-Atab, Samar Alqatari, Feyza B. Oruc, Tewfic Souier, Matteo Chiesa, Ali K. Okyay, Ammar Nayfeh
Publikováno v:
AIP Advances, Vol 3, Iss 10, Pp 102119-102119-7 (2013)
A thin-film ZnO(n)/Si(p+) heterojunction diode is demonstrated. The thin film ZnO layer is deposited by Atomic Layer Deposition (ALD) at different temperatures on a p-type silicon substrate. Atomic force microscopy (AFM) AC-in-Air method in addition
Externí odkaz:
https://doaj.org/article/30f75175af8d463791e842db317288c3
Publikováno v:
IEEE Photonics Journal, Vol 5, Iss 2, Pp 2200707-2200707 (2013)
We present ZnO-channel thin-film transistors with actively tunable photocurrent in the visible spectrum, although ZnO band edge is in the ultraviolet. ZnO channel is deposited by atomic layer deposition technique at a low temperature (80 °C), which
Externí odkaz:
https://doaj.org/article/04fab514a2c4497e9399e21bc4b5a8e3
Autor:
Ali K. Okyay, Sh. Bagheri Mashhadi, M.J. Hadianfard, Mohammad Ali Ghaffari, Erfan Salahinejad
Publikováno v:
Materials Science and Engineering C
Materials Science and Engineering: C
Materials Science and Engineering: C
Cataloged from PDF version of article. In this paper, chemical composition uniformity in amorphous/nanocrystallization medical-grade stainless steel (ASTM ID: F2581) sintered with a Mn–Si additive was studied via scanning electron microscopy, energ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7de2c5331699d1c520f0b8d072fa5dde
https://doi.org/10.1016/j.msec.2012.06.004
https://doi.org/10.1016/j.msec.2012.06.004
Publikováno v:
ECS Transactions
We demonstrate a promising approach for the monolithic integration of Ge-based nanoelectronics and nanophotonics with Silicon: the selective deposition of Ge on Si by Multiple Hydrogen Annealing for Heteroepitaxy (MHAH). Very high quality Ge layers c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::14725efc5e27ccb6fd7e0c8e2ed038e9
https://doi.org/10.1149/1.2986841
https://doi.org/10.1149/1.2986841
Autor:
Mehmet C, Onbaşlı, Taichi, Goto, Astera, Tang, Annia, Pan, Enes, Battal, Ali K, Okyay, Gerald F, Dionne, C A, Ross
Publikováno v:
Optics express. 23(10)
Cobalt-substituted SrTiO3 films (SrTi0.70Co0.30O(3-δ)) were grown on SrTiO3 substrates using pulsed laser deposition under oxygen pressures ranging from 1 μTorr to 20 mTorr. The effect of oxygen pressure on structural, magnetic, optical, and magnet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::4b919937c41d09b7452a8fc6daba2fc0
https://pubmed.ncbi.nlm.nih.gov/26074589
https://pubmed.ncbi.nlm.nih.gov/26074589
Publikováno v:
14th IEEE International Conference on Nanotechnology, IEEE-NANO 2014
Date of Conference: 18-21 Aug. 2014 In this work, the effect of embedding Silicon Nanoparticles (Si-NPs) in ZnO based charge trapping memory devices is studied. Si-NPs are fabricated by laser ablation of a silicon wafer in deionized water followed by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9b6a6ad7f91d5d518ff351c36cdb2a0c
https://doi.org/10.1109/nano.2014.6968168
https://doi.org/10.1109/nano.2014.6968168