Zobrazeno 1 - 10
of 260
pro vyhledávání: '"Ali A. Orouji"'
Design of a novel high-sensitive SOI-Junctionless BioFET overcoming sensitivity degradation problems
Autor:
Mohammad K. Anvarifard, Ali A. Orouji
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-18 (2024)
Abstract For the first time, a new configuration of label-free junctionless semiconductor device is proposed to boost sensitivity in the identification of biomolecule specifies. Instead of creating the nanocavity inside the gate oxide, the nanocavity
Externí odkaz:
https://doaj.org/article/8004e55df50b406ca9b69dbc985d2af0
Autor:
Amir Gavoshani, Ali A. Orouji
Publikováno v:
IET Circuits, Devices and Systems, Vol 16, Iss 3, Pp 272-279 (2022)
Abstract In this study, design considerations of a new device structure are presented to improve the self‐heating effect (SHE) and the breakdown voltage of the Deep Gate LDMOS (Lateral Double Diffused Metal Oxide Semiconductor) transistor and compa
Externí odkaz:
https://doaj.org/article/73b6aef2545b41d7b88bc6613d24539f
Autor:
Toktam Aghaee, Ali A. Orouji
Publikováno v:
Results in Physics, Vol 16, Iss , Pp 102855- (2020)
Using dual bias for a single graphene layer a multi-layer THz absorber is proposed. An exclusive circuit representation is derived and a two-layer structure is investigated as a reconfigurable multi-narrow band absorber. In order to optimize bias val
Externí odkaz:
https://doaj.org/article/ef4cae94aecd4ab1b3fb1510c8c2e855
Publikováno v:
مجله مدل سازی در مهندسی, Vol 13, Iss 43, Pp 121-127 (2015)
In this paper, a novel MESFET with an undoped region (DS-UR) and drain side-double recessed 4H-SiC metal semiconductor field effect transistor (MESFET) is presented. The key idea in this work is to modify the charge concentration and electric field d
Externí odkaz:
https://doaj.org/article/557004bd7db74bcb9d693d3fe065494b
Publikováno v:
International Journal of Industrial Engineering and Production Research, Vol 24, Iss 1, Pp 59-70 (2013)
This paper deals with the problem of forbidden states in discrete event systems modeled by Petri Net. To avoid the forbidden states, some constraints which are called Generalized Mutual Exclusion Constraints can be assigned to them. Enforcing these c
Externí odkaz:
https://doaj.org/article/1475476426a8499bbb639b1b964df072
Publikováno v:
International Journal of Industrial Engineering and Production Research, Vol 22, Iss 2, Pp 115-121 (2011)
Discrete event system, Supervisory control, Petri Net, Constraint This paper presents a method to manage the time in a manufacturing system for obtaining an optimized model. The system in this paper is modeled by the timed Petri net and the optimizat
Externí odkaz:
https://doaj.org/article/46326d7e37824a01a36ee0ab3f29c3e7
Autor:
Mohammad K. Anvarifard, Ali A. Orouji
Publikováno v:
Journal of Engineering, Vol 2013 (2013)
In this paper a comprehensive investigation of a novel device called split-gate silicon-on-insulator MOSFET (SPG SOI MOSFET) is proposed to reduce short-channel effects (SCEs). Studying the device has been done by analytical approach and simulation.
Externí odkaz:
https://doaj.org/article/d45691011f514f20b539980f20618ee2
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 334-340 (2022)
In this paper, after calibrating the models and parameters used in the simulations based on experimental data, by using the opposite doping in the channel and between the gates in an asymmetric double-gate junctionless (JL) transistor with the 3nm ga
Externí odkaz:
https://doaj.org/article/fc08317ff33e4d73aaf9da6510e8af28
Publikováno v:
Integration. 88:390-399
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a02e3101aae79791d72f0c1deaa44043
https://doi.org/10.1016/j.vlsi.2022.11.001
https://doi.org/10.1016/j.vlsi.2022.11.001
Autor:
Amir Sohrabi-Movahed, Ali A. Orouji
Publikováno v:
Journal of Electronic Materials. 52:1366-1374
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a6751befce3e80351958ce2bd72a61d
https://doi.org/10.1007/s11664-022-10115-w
https://doi.org/10.1007/s11664-022-10115-w